您要查找的是不是：
- A novel current reference source based on subthreshold MOSFET's with high power supply rejection ratio(PSRR) is presented. 基于亚阈值MOSFET,提出了一种新颖的高电源抑制比(PSRR)电流基准源。
- Subthreshold MOSFET 亚阈值MOSFET
- The LDD MOSFET is a suitable structure for VLSI. 这些优点意味着LDD MOSFET结构在VLSI中有着广泛的应用前景.
- Features: trench FET Power MOSFET 100% Rg Tested. 特点:沟道场效应管;功率MOS晶体管.
- The motor driver section uses four N-Channel high Voltage MOSFET. 电压驱动部分是利用四组大功率高压MOSFET。
- Fish shocker / fish stunner built on MOSFET transistors. 翻译过来是电捕鱼设备的基础上的MOSFET晶体管.
- Subsyndromal symptomatic depression (SSD) is a type of subthreshold depression. 亚综合征抑郁(SSD)属阈下抑郁的一种类型。
- Introduce the principle of MOSFET AC square wave inverter power source. 介绍了MOSFET交流方波逆变电源的工作原理。
- Haloperidal combined with subthreshold morphine have analgesic action and no addiction. 吗啡与氟哌啶醇合用 ;在产生明显协同镇痛作用的同时 ;致成瘾性却比等效剂量吗啡低得多 .
- Objective To investigate the synergistic analgesic action of rotundine combined with subthreshold dose of dolantin. 摘要目的观察罗通定与阈下剂量哌替啶合用后对哌替啶镇痛作用的影响。
- The radiation-induced interface traps on BF+2 implanted Si-gate PMOSFET are measured using the subthreshold method. 利用亚阈测量技术对BF+2注入硅栅PMOSFET辐射感生界面陷阱进行了测量。
- High dose could function together with subthreshold dose of sodium pentobarbital to cause mouse sleep. 高剂量有协同阈下剂量戊巴比妥钠致小鼠睡眠的作用；
- The instrument consists of an argon-filled well type ionization chamber, a MOSFET electrometer and a Z80 microcomputer. 本文介绍的智能化核素活度计由充氩井型电离室、MOS场效应管静电计测量头和Z80微型计算机组成。
- Objective To observe the addiction of mice used haloperidal combined with subthreshold morphine. 目的观察氟哌啶醇与阈下剂量吗啡合用对小鼠成瘾性的影响。
- This thesis investigates the back-gate bias control on subthreshold circuit mismatch as well as its physical model. 摘要:本论文研究背闸偏压对于次临界区的电路不匹配之效应与物理模型。
- Speech Topic: How to choose MOSFET for charge control switch of portable devise? 演讲题目:如何选择MOSFET做为可携式电器的充电控制开关?
- Allegro's A3901 offers a very small package size, low operating voltage and low voltage drop MOSFET outputs. Allegro的A3901具有小巧精致的封装尺寸,低工作电压和低电压降MOSFET输出的特性。
- This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region. 模型显示，在亚阈值区或者弱反型区，电子密度随深度增加而增加；
- Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA. 在此基础上,通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响,进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
- Abstract: The radiation-induced interface traps on BF+2 implanted Si-gate PMOSFET are measured using the subthreshold method. 文摘:利用亚阈测量技术对BF+2注入硅栅PMOSFET辐射感生界面陷阱进行了测量。
