Research is made on the effect of substrate temperature(?T??s)on defects of SiO?2/Si interface caused by vacuum ultraviolet (VUV)photochemical vapor deposition (CVD).

• 研究了VUV（真空紫外）光直接光CVD（化学汽相淀积）SiO2/Si界面微结构缺陷与衬底温度（Ts）的关系。