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- Deep-Trench Termination of Bipolar RF Power Devices 双极RF功率管的深阱结终端
- RF power device 射频功率器件
- Low voltage rating power device. 低电压启动。
- The power of the modulated carrier wave is increased by the RF power amplifier. 射频功率放大器增加了调变载波的功率。
- Therefore for to output RF power, 13.5 VDC must be applied to this pin. 因此为了获得RF的功率输出，必须在这个脚上加入13.;5V的电压。
- The simulation shows the device achieves the efficiency 28% when the beam is 800 kV and 10 kA, and outputs RF power of 2.25 GW. The experiment was also carried out on Sinus-700 accelerator. The measured microwave power is 2.44 GW at the frequency 9.4G Hz. 根据此理论;根据Sinus-700加速器的参数(800kV;10kA)设计了一个X波段的高功率微波器件;2.;5维Particle in Cell(PIC)程序模拟的效率为28%25;微波频率为9
- RF power devices 射频功率器件
- We finally found that the device of SiGe HBT is more robust to hot carrier damage on high frequency and RF power performance when it is under the driving of a constant collector current. 并且在这实验的过程中，我们发现在固定集极电流驱动下的矽锗异质接面双极性电晶体，受到热载子伤害后，其高频特性以及功率特性相对地较不受到影响。
- A powerful device exploded outside the station. 一枚威力巨大的炸弹在车站外爆炸了。
- As for high power device, paste/SSDA is used popular for die attach. 对那些做大功率器件的客户来说，锡膏或者焊线用来贴芯片比较普遍。
- Both an RF power analyzer and a spectrum analyzer are essentially specialized superheterodyne receivers. 功率分析仪和频谱分析仪都本质上都是超外差接收机。
- The comparison is carried out under the same of RF power radiated from the array aperture. 比较是在相同的阵列天线口面辐射功率条件下进行的。
- Steve C. Cripps, RF Power Amplifier for Wireless Communications, Artech House, 1999. 参考文献[1]袁杰，高电电路分析与设计(二)，全威图书有限公司，2001。
- Rf power pre-alarm(under the attenuation threshold with "RF "LED flashing on the amplifier display. 射频功率预报警(在衰减极限之下;用"射频"发光二极管在放大器显示上闪烁.
- The microPower is the smallest and most discreet hearing aid in the world's power device in the industry. 小霸王是世界助听器行业中体积最小、最精致的大功率助听器。
- Broadband high power devices become main research object. 宽频带高功率器件成为主要的研究对象。
- He needed to devise a powerful device to detain this devil next time! 他要设计一个强有力的装置下次把魔鬼扣留起来!
- It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
- The main components in a test system may include DC bias, DC measurement, RF power meter, network analyzer, RF sources, and other instruments. 一个测试系统中的主要部分可能包括直流偏压、直流测量、RF功率计、网络分析仪、RF源，以及其它仪器。
- Broadband high power devices are main research object. 宽频带高功率器件成为主要研究对象。
