On the even and smooth pure diamond, covered filmed optional growing technology is used to direction-fixed deposit four B doped diamond resistance to form Wegence electric bridge to prepare the self-compensated pressure sensor CMOS chip.

• 在平整、光滑本征金刚石膜上，利用掩膜法选择性生长技术，定向沉积4个掺硼金刚石膜电阻，形成惠斯顿电桥，制成自补偿压力传感器芯片。