Lower specific contact resistance and better adhesion are obtained. The relation of specific contact resistance with the wave-lengths (component) of In_(1-x)Ga_xAs_yP_(1-y) are found.

• 得到了较低的比接触电阻和较好的附着性,找到了比接触电阻与In_(1-x)Ga_xAs_yP_(1-y)波长(组份)的变化关系。