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- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- A Rudimental Study on Ion Implanting on Schizosaccharomyces promb Producing CoQ10[J]. 引用该论文 王丽;郑之明;樊永红;苏彩欣;许德军;柳丹;古绍彬;余增亮.
- The effects of ion implanting W and carbonizing on the microstructure and surface performance of low carbon structural steel were investigated. 研究了离子注渗W和渗碳处理对低碳结构钢显微组织、表面性能的影响。
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- Hardness, strength, fatigue resistance, wear resista nc e, corrosion resistance, oxidation resistance, conductivity and optical property of material surface can be improved by ion implanting. 离子注入可以改善材料表面的硬度、强度、疲劳抗力,耐磨性、耐腐蚀性、抗氧化性、导电性和光学性能。
- Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment. 传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
- An air chamber placed in vacuum for ion implanting was designed aiming at the fact that the ion implantation experiments are all performed under the vacuum state. 针对目前的离子注入实验都是在真空状态下进行的事实,设计了真空内置式大气靶室装置。
- Control of Channel-effect in Ion Implanting Process 离子注入中的沟道效应控制
- The application of Freeman ion source linked to LC-2A ion implanter is described in the paper. 本文叙述了弗里曼(Freeman)离子源体联接在LC-2A型中能离子注入机上的应用;
- The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. 本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。
- Thc mutagenic effects of Vc strains by low encrgy ion implantation have been studied. 对低能离子注入Vc生产菌的诱变效应进行研究。
- The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target corner. 注入离子剂量在靶表面的分布不均匀，在边角附近出现峰值；
- M.Farley, B.Simonton, in “Ion Implantation Science and Technology”, Ion Implantation Technology Co.Yorktown 1996. 宋慧娟等编著，人类与自然科学，五南图书出版公司印行，2003/09。
- First, high-current metal ion implantation with the development of a synthesis of metal silicide of new technologies. 首先用强流金属离子注入发展出合成金属硅化物的新技术。
- The codeposition of Mo-Ni by electroplating and ion implantation were used to add molybdenum into coatings. 又采用钼-镍合金电镀和离子注入钼+铬硅共渗的方法， 得到了含钼的铬硅渗层。
- The review ofour work includes: ion implanted contact, ion beam sputtering diposition hardfilm on beryllium and lubricate film on steel and so on. 即离子注入、子束混合、种离子束淀积等技术的研究和应用。
- Abstract: This paper introduces the application and development of ion plating, ionodialysis, ion implantation and the compound technology. 文摘:介绍了离子镀、离子渗、离子注入及其复合工艺的应用与发展。
- From the perpendicular FMR spectra measured, the variation of the magnetic anisotropy with ion implantation dose is determined. 根据实验测得的垂直FMR谱,确定了氮离子注入层的磁各向异性随注入剂量而变的关系。
- In this paper,the volume expansion in B ion implanted Ib type diamond has been studied and the origin has been analyzed. 本文对B离子注入合成Ib型金刚石薄膜后体积膨胀现象进行了研究,分析了引起体积膨胀的可能因素及原因。
