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- HgCdTe epilayers 碲镉汞外延材料
- The Plasma Properties of Laser ablated HgCdTe[J]. 引用该论文 满宝元;王象泰;官文栎.
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- Effect of HgCdTe Composition Ununiformity on Its X-Ray Reflectivities[J]. 引用该论文 王庆学;杨建荣;魏彦锋;方维政;陈新强;何力.
- CdTe film HgCdTe infrared focal plane array device surface passivation ZnS. 标 签 CdTe薄膜 HgCdTe红外焦平面 器件表面钝化 ZnS.
- Growth and defects characterization of HgCdTe film grown by LPE method[J]. 引用该论文 魏彦锋;陈新强;曹妩媚.
- SiGe epilayers were grown on Si substrate by UHV/CVD. The epilayers were studied by SIMS and XPS. 系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。
- In this thesis, photoluminescence (PL) spectroscopy and time-resolved spectroscopy were used to investigate the optical properties of InN epilayers. 本论文中我们利用光激萤光光谱和时间解析光谱来研究氮化铟磊晶层之光学特性。
- It is described that a novel non dispersive infrared (IR) CO gas monitor with HgCdTe detector and double beam. 本文介绍了一种新型便携式红外 CO气体分析仪。
- Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target[J]. 引用该论文 王晨飞;王庆学;李言谨.
- Investigation of Thermal Effect of HgCdTe Detector with Irradiation by Off-band CW CO2Laser[J]. 引用该论文 李修乾;程湘爱;王睿;马丽芹;陆启生.
- According to package characteristics of long linear HgCdTe IRFPA detector, difficulties of the metal split micro dewar manufacture are discussed in the paper. 摘要针对长线列碲镉汞红外焦平面探测器封装的特点，文章讨论了分置式微型杜瓦研制的难点。
- It is a part of the research project named the study of testing system for measuring the MTF of cooled 288 X 4 HgCdTe FPA. 本论文针对带片上TDI的288×4 HgCdTe IRFPA探测器，研究MTF的测试技术。
- The microstructures of vacancy-type defect in HgCdTe (MCT) samples grownunder micro-gravity condition were studied by positron lifetime measurements. 采用正电子湮没寿命谱方法对空间微重力及重力条件下生长的呼银汞（MCT）材料中的微观缺陷进行了研究。
- The characteristic of different wave-band HgCdTe photodiodes has been investigated when detecting high temperature target . 摘要 针对不同波段的碲镉汞红外探测器在探测高温目标情况下的特性进行了研究。
- Assessments of home- made TMAl,TMCa,TMIn and TMSb have been made by use of an AP-MOVPE equipment made by us. GaAs,AlGaAs,InP,GaSb bulk epilayers and GaAs/AlAs superlattice and GaAs/ AlGaAs quantum wells have been grown. 利用我们研制的常压MOVPE设备对国产TMGa、TMAl、TMIn和TMSb进行了鉴定，为此分别生长了GaAs、AlGaAs、InP、GaSb外延层和GaAs/AlAs、GaSb/InGaSb超晶格和GaAs/AlGaAs量子阱结构。
- The shear strain and strain of MBE grown CdTe(211)B epilayers on 3inch Si(211) substrates are measured using reciprocal space maps in the symmetric and asymmetric reflection by high resolution X-ray diffraction. 文章利用高分辨率X射线衍射技术对分子束外延CdTe(211)B/Si(211)材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的对称衍射面和非对称衍射面的倒易空间图,对CdTe外延层的剪切应变和正应变状况进行了分析。
- The lattice strain of MBE grown CdTe(211)B epilayers on 76mm Si(211) and 76mm GaAs(211)B substrates was studied by reciprocal space maps of high-resolution multi-crystal multi-reflection X-ray diffractmetry(HRMCMRXD). 本文利用高分辨率多重晶多重反射X射线衍射技术对分子束外延CdTe(211)B/Si(211)与CdTe(211)B/GaAs(211)B材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的倒易点二维图,对CdTe缓冲层的应力和应变状况进行了分析。
- To grow large size HgCdTe crystal with good crystallinity and composition uniformity by using Modified Bridgman technique,lower growth speed should be choosed. 较低的晶体生长速度条件下 ,凹陷深度较小 ,固液界面形态较平。 由实验和讨论得知 ,宜选择较低的晶体生长速度用改进Bridgman法生长HgCdTe晶体。
