您要查找的是不是：
- The devices include CMOS/Si, CMOS/SOS,CPU,GaAs MESFET,MIMIC,VHSIC and CCD. 涉及的器件包括：CMOS/体硅电路，CMOS/SOS电路，GaAsMESFET及其电路，电荷耦合器件等。
- The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied. 本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。
- The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper. 报道了n型GaAs上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的GaAsMES－FET的失效分析。
- It was confirmed that the optimum volume ratio of 50% citric acid solution to 30% H2O2 is 1.5 : 1.The LT GaAs cap layer of GaAs MESFET was etched off with the 50% citric acid/H2O2 solution, and the AlAs spacer layer with hydrochloric acid. 分析了选择腐蚀机理;确定了腐蚀工艺中50%25柠檬酸:H_2O_2=1.;5:1的最佳腐蚀液配比方案。
- A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer. 本文采用在半绝缘GaAs衬底中离子注入Be;于沟道有源层下引入P型埋层技术;制成P埋层GaAs MESPET(PB-GaAs MESFET).
- The principles of commonly used types of DAC are analyzed. A monolithic integrated 4 bit GaAs MESFET D/A circuit is designed and fabricated using GaAs VHSIC technology being used now. 在详细分析了几种常用类型D/A转换电路工作原理的基础上,结合现有GaAs VHSIC的制作工艺条件,设计并制作了一种4位单片集成GaAs MESFET D/A转换电路。
- A systematical and intensively study of Schottky barrier and the whole device of GaAs MESFET has been presented in this paper. To the weaknesses of conventional method , the author put forward the Temperature Ramp Measurement (TRM) . 本实验对GaAs MESFET栅Schottky势垒接触及整体器件进行了较为系统和深入的研究，针对目前常规评价方法不能适应当前微电子器件快速发展的需要而出现的诸多问题，提出了恒定应力下的温度斜坡法（简称TRM法），动态观察和分析器件退化全过程，并应用此方法成功给出了实验样品的寿命预测值和失效率。
- A12GHz l.5dB Submicron Gate GaAs MESFET 12GHz 1.;5dB亚微米栅GsAs MESFET
- High Frequency Property Analysis for GaAs MESFET Planar Varactor 平面型变容管高频特性分析
- The Research on Large-Signal Modeling of GaAs MESFET Tube 管大信号建模研究
- A Switching Model of GaAs MESFET for Broadband Application 开关模型
- Si~+ Implantation for Low Noise GaAs MESFET Active Layer 低噪声GaAs MESFET有源层的Si~+注入
- Research on the Small-Signal Equivalent Circuit Parameters of Microwave Power GaAs MESFET 小信号等效电路的研究
- Noneutectic Au/Ge Alloy Ohmic Contact Technology for Diffused N-Channel GaAs MESFET 非共晶Au/Ge欧姆接触工艺改善扩散法n沟道GaAs MESFET
- 18GHz GaAs MESFETs with 1.7dB NF min 18GHz最小噪声系数1.;7dB GaAs MESFET
- Key words: GaAs MESFET; 关键词： 砷化镓场效应管；
- GaAs MESFET 砷化镓
- These results indicate that LaBe is promising for GaAs IC. 结果表明,LaB_6有希望用于GaAs集成电路。
- Large Signal matching with LDMOS and GaAs FET is Plus. 想为客户所想，满足特种需求，提供特色服务。
- "We used to associate GAA with the Free State and bad teeth. "我们使用了以副棉酚与游离状态和坏牙齿。
