For VLSI, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see Section 9. 2. 4) or by using planarization.

 
  • 对于超大规模集成电路的平面状表面;可以用偏置溅射淀积法的层间介质淀积(见9.;2
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