Electromigration has caught more attention as one of the major mechanisms for VLSI, as the characteristic measurement become to sub-micrometer even to nanometer and the current density increase.

• 随着VLSI特征尺寸向着深亚微米级甚至纳米尺度发展，其互连线截面积越来越小，其承受的电流密度大幅度增加，电迁移引发的失效越来越显著，引起人们极大关注。