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- DC Reactive Sputtering Process for Al_2O_3 Film Deposition and Its Applications 直流反应溅射Al_2O_3膜工艺探讨及应用
- Influence of Nitrogen Partial Pressure on Zirconium Nitride Films Grown by DC Reactive Sputtering 直流溅射中氮气分量对氮化锆薄膜性质的影响
- DC reactive sputtering 直流反应溅射
- Aluminum nitride (AIN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. 采用直流磁控反应溅射法,在Si(100)和Pt/Ti/St(100)上制备了具有较好(002)择优取向性的AlN薄膜。
- In this paper, CIO thin film was prepared by DC reactive magnetron sputtering method in JGP450 type high vacuum magnetron sputtering apparatus, the surface morphology and structure of the CIO thin film were analyzed by AFM, XRD and XPS. 本文在JGP450型高真空磁控溅射台上,采用直流反应磁控溅射法制备了CIO薄膜,用AFM、XRD和XPS分析了样品的表面形貌、组织结构、化学态和元素价态。
- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- TiO 2 thin films with the thickness of 300nm were deposited,at a total pressure of 0.80Pa in mixed O 2 and Ar atmosphere(O 2 /Ar :0.10,0.20,0.30),on SiO 2 -coated glass substrates by DC reactive magnetron sputtering. 在工作气压为0.;80Pa的氧氩气混合气氛下;改变氧与氩的流量比(O2/Ar:0
- The ZrN films were deposited by RF magnetron reactive sputtering system. 使用反应性磁控溅镀系统成长氮化锆薄膜。
- DC reactive magnetron sputtering 直流反应磁控溅射
- DC reactive magnetron sputtering mothed 直流反应磁控溅射法
- DC magnetron reactive sputtering 直流磁控溅射
- DLC and a-SiC:H films were prepared by the rf glow discharge and the reactive sputtering method respectively. 本文分别采用射频(13.;56MHz)等离子体CVD及射频反应溅射方法制得了DLC及a-SiC：H薄膜。
- Up to now reported NiOx coating are usually produced by rf reactive sputtering or electron beam reactive evaporation (BEV). 已报道的NiOx薄膜常用金属镍的射频反应溅射或电子束反应蒸发方法制备。
- Structure and Optical properties of ZnO Films DC Reactively Sputtered at Different Oxygen Partial Pressure 不同氧分压下直流反应溅射ZnO薄膜的结构和光学特性
- Transparent and conductive oxides CdIn 2O 4 (CIO) thin films were prepared by RF reactive sputtering from a Cd-In alloy target in Ar+O 2 atmosphere. 在Ar+O2 气氛 ;采用射频反应溅射Cd In靶制备CdIn2 O4 (CIO)薄膜 .
- The nitrogen partial-flow rates are increased in reactive sputtering, thus the thermal stability of TaN is decreased and work-function is increased. 若制程中增加溅镀机里的氮气流量，则所制作出来的氮化钽之功函数会增加而其热稳定性将会降低。
- Lead Oxide Thin Films Deposited by DC Reactive Magnetron Sputtering 直流反应磁控溅射制备氧化铅薄膜
- The polycrystalline Fe_3O_4 film was prepared in O2 and Ar mixed atmosphere by facing-target reactive sputtering without substrate heating during the deposition. 在基底不加热的条件下,用对向靶反应溅射法在氩气和氧气的混合气氛中制备了多晶Fe_3O_4薄膜。
- The MOS capacitor with Al 2O 3 dielectric of 3 .45nm equivalent oxide thickness (EOT) is fabricated by reactive sputter. 利用反应溅射方法制备了等效氧化层厚度为 3 45nm的Al2 O3栅介质MOS电容 ;研究了Al2 O3作为栅介质的瞬时击穿和恒压应力下的时变击穿等可靠性特征 .
- S. B. Krupanidhi and M. Sayer,”Position and Pressure Effects in RF Magnetron Reactive Sputter Deposition of Piezoelectric Zinc Oxide” ,J.Appl.Phys.,vol. 56,pp. 3308,1984. 魏清梁，固态微型谐振器之压电层与反射层研制，国立中山大学电机工程研究所，硕士论文，2005.
