Conventional MOS image sensors require polymer onchip microlenses and dyed RGB color filters, which are fragile and extremely susceptible to sunlight exposure and a change in temperature.

• 传统的mos图像传感器需要采用聚合在电路板上的微透镜和染色RGB颜色过滤器，这种脆性材料非常易碎，而且在日晒下和温度变化时极其易受影响。