Analysis indicates the potentialities that the new device would show significantly higher power than that of a bipolar transistor and a FET at the microwave frenquencies, and have a rather wider frequency band.

• 分析表明这种新器件在微波频率下具有远高于双极型晶体管和场效应晶体管的功率潜力；并可得到较宽的带宽.