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- Keywords Phononic crystals Vibration band gap Viscoelasticity Plane wave expansion; 声子晶体;振动带隙;粘弹性;平面波展开;
- vibration band gap 振动带隙
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- Research on Vibration Band Gaps of Phononic Crystals Consisting of Scattering Cells 基于散射单元的声子晶体振动带隙研究
- RESEARCH ON THE VIBRATION BAND GAPS OF ONE DIMENSIONAL VISCOELASTIC PERIODIC STRUCTURE 一维粘弹材料周期结构的振动带隙研究
- RESEARCH ON TORSIONAL VIBRATION BAND GAPS OF ONE DIMENSIONAL PHONONIC CRYSTALS COMPOSED OF ROD STRUCTURES 一维杆状结构声子晶体扭转振动带隙研究
- Research on vibration band gaps and characteristic of vibration isolation of periodicmass-spring structure 周期弹簧振子结构振动带隙及隔振特性研究
- Calculation and Experiment on Vibration Band Gaps of Periodic Mass-Spring Structure 周期弹簧振子结构振动带隙理论与实验研究
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下,我们观察到矽的能隙缩减还有光强度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
- There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二维光子晶体中引入点缺陷后,在光子晶体禁带中会有共振模出现;
- The band gap's broaden is apparent when the larger refractive index layer is graded. 改变高折射率层的几何厚度,光子带隙的拓宽更为显著。
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
- All internal reference voltages are derived from a temperature compensated and trimmed, on-chip band gap circuit. 所有的内部参考电压都做了温度补偿和平衡,芯片内置带隙电路。