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- As-grown Cd0.9Zn0.1Te wafer prepared by vertical Bridgman method was annealed using Cd1-yZny alloy as source. 采用Cd1-yZny合金作退火源;对垂直布里奇曼法生长获得的Cd0.;9Zn0
- Single crystal of Cr~(3+): LiCaAlF_6 was grown by vertical Bridgman method from stoichiometric composition melt. 用垂直Bridgman法从化学计量比组份的熔体中长出Cr~(3+):LiCaAlF_6单晶。
- In crystal growth experiment, PbI_2 single crystal was grown by Vertical Bridgman Method (VBM) in the two- temperature zone vertical growth furnace. 晶体生长实验中,我们自行设计了双温区管式电阻生长炉,采用垂直布里奇曼法(VBM),以合成的PbI_2多晶为原料进行晶体生长。
- Crystal growth dynamics theory and technique of vertical bridgman method for GaAs single crystal growing were introduced. 简要阐述了垂直布里奇曼(VB)法生长GaAs单晶材料的动力学原理及VB-GaAs单晶的生长技术。
- Cd_(0.955)Zn_(0.045)Te single crystal with dimensions of 55mm in diameter and low dislocation density and structural perfection was grown by Vertical Bridgman Method. 采用垂直布里奇曼法(VB)生长出直径为55mm、低位错密度、结构完好的碲锌隔单晶(Cd0.;955Zn0
- During the lead iodide (PbI_2) crystal growth by vertical bridgman method (VBM),how to resolve the problem of single crystal in rich of iodine atom is very important. 实验中发现:通过合理的选择坩埚在温场中的生长位置,可最大限度的减轻晶体富碘现象,分析了相关工艺,得出了最优工艺方案。
- It was found that the crystal grown by Cd compensated vertical Bridgman method has higher crystallinity, homogeneous concentration distribution, lower EPD, higher IR transmittance and higher resistance than that grown by vertical Bridgman method. 结果表明,Cd补偿垂直布里奇曼法生长的晶体结晶质量好、成分分布均匀、EPD低、红外透过性能好且电阻率高。
- In this paper,the Lead Iodide(PbI_2) poly-crystal has been successfully synthesized directly from Pb and I_2 by two-zone vapor-transporting method(TVM). PbI_2 single crystal with three different colors were prepared using Vertical Bridgman Method(VBM). 以高纯Pb和I2单质为原料;采用两温区气相输运法(TVM)成功合成出单相PbI2多晶原料;并以此为原料;用垂直布里奇曼法(VBM)生长了3种不同颜色的PbI2单晶体.
- Numerical Simulation of CdTe Growth with Vertical Bridgman Method 垂直Bridgman生长CdTe过程的数值模拟
- Growth of Cd_(1-x)Mn_xTe Crystals by a Vertical Bridgman Method 垂直 Bridgman 法生长半磁性半导体 Cd_(1-x)Mn_xTe 晶体
- Growth of lead iodide single crystal by vertical bridgman method 垂直布里奇曼法生长碘化铅单晶体
- Keywords vertical bridgman method;crystal structural;CdZnTe; 垂直布里奇曼法;晶体结构;碲锌镉;
- Keywords CdZnTe;seed;vertical Bridgman method;near infrared spectrum; 籽晶;垂直布里奇曼法;近红外光谱;
- Keywords lead Iodide single crystal;vertical bridgman method;crystal growth; 碘化铅单晶体;垂直布里奇曼法;晶体生长;
- Keywords relaxor ferroelectric crystal;crystal growth;vertical Bridgman method; 弛豫铁电体;晶体生长;坩埚下降法;
- Controlling Solid-Liquid Interface Configuration During Crystal Growth of CdZnTe by Vertical Bridgman Method 垂直布里奇曼法生长CdZnTe晶体时固液界面形状的控制
- Optimization of Crucible Descending Rate during the Crystal Growth of CdZnTe by a Vertical Bridgman Method 垂直布里奇曼法生长CdZnTe晶体时坩埚下降速度的优化研究
- Evolution of Solid-liquid Interface of CdZnTe Crystal Growth by Vertical Bridgman Method 碲锌镉垂直布里奇曼法晶体生长过程固液界面的演化
- Growth and Characterization of Large-size Cd_(1-x)Zn_xTe Single Crystal Using Seeded Vertical Bridgman Method 大尺寸Cd_(1-x)Zn_xTe晶体籽晶垂直布里奇曼法生长技术与性能表征
- Growth of Cd_(0.9)Zn_(0.1)Te crystals by Cd compensated vertical bridgman method Cd补偿垂直布里奇曼法生长Cd_(0.;9)Zn_(0