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- A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity. 本文描述了一种汽相外延Ga_xIn_(1-x)As的技术:在AsCl_3/Ga/In/H_2体系中,采用Ga/In合金源汽相生长Ga_xIn_1As。
- Metal Oxide Vapour Phase Epitaxy 金属氧化物蒸汽相外延
- vapour phase epitaxial 汽相外延法
- vapour phase epitaxial growth 汽相外延生长
- OPTICAL PROPERTY AND BISTABILITY OF CdS EPILAYERS GROWN BY VAPOUR PHASE EPITAXY VPE生长CdS外延膜的光学性质与光学双稳态
- 2 Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy[J]; Semiconductor Photonics and Technology; 2005年01期; 29-32 孔祥东,张玉林,宋会英,卢文娟;微机电系统的微细加工技术[J];微纳电子技术;2004年11期;32-38
- vapour phase epitaxy 汽相取向附生, 汽相外延
- Vapour phase chromatography has rapidly become one of the most successful analytical techniques. 气相色谱法已经迅速成为最成功的分析方法之一。
- vapour phase epitaxy VPE 汽相取向附生, 汽相外延
- Vapour phase hydrogenation of furfural was employed to produce 2 methylfuran through a copper ammonia complex catalyst. 采用负载型铜氨络合物催化剂进行糠醛气相加氢制2甲基呋喃。
- In this work, more attention has been paid to the nano-twins and the evolution of solid phase epitaxial regrowth in the annealed specimens. 本实验将研究重点置于离子布植矽退火后的双晶结构以及固相磊晶成长的的演变。
- Equilibration is then carried out in a separate chamber and the vapour phase is carried onto the column, taking the precautions necessary to avoid any changes in the equilibrium. 在隔离箱中实现平衡，气相被携带进入色谱柱，必要的注意，避免平衡发生变化。
- The vapour phase ortho-selective alkylation of phenol with methanol was investigated over spine1-type cobalt chromite catalyst with K as the supported catalyst. 摘要研究了具有尖晶石结构的铬酸钴及负载钾的铬酸钴催化剂上苯酚和甲醇气相邻位烷基化反应。
- This thesis was designed to study vapour phase surface grafting polymerization of acrylonitrile onto low density polyethylene (LDPE) film using benzoyl peroxide (BPO) as an initiator. 本文主要以低密度聚乙烯膜(LDPE)为基体膜，以过氧化苯甲酰(BPO)为引发剂，对丙烯腈(AN)气相表面接枝聚合反应进行了系统研究，以探讨接枝反应机理、优化反应条件，目的在于建立聚烯烃材料表面改性的新方法； 同时对接枝膜的阻氧性能进行了研究。
- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 标 签 GaP:N液相外延材料 光致发光 发光区域。
- The homogenisation temperature, that is the temperature at which the fluid and vapour phases coalesce, is the minimum temperature of depositionof the mineral. 均化温度，即流体与汽态聚结温度，是矿物沉积的最低温度。
- A cloud is a condensation of water vapour. 云是由水蒸汽凝缩而成的。
- The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. 用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.
