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- v groove mos transistor v 槽型栅金属氧化物半导体晶体管
- v groove mos device v 槽型栅金属氧化物半导体掐
- v groove mos v 型槽金属氧化物半导体
- Then a novel multi-valued flip-flop is designed based on the improved clock-controlled neuron MOS transistor. 然后采用此改进的钟控神经MOS管设计了一种新型多值触发器。
- The image process and corner detection of V groove seam based on structure light vision sensing has been studied. 摘要对基于结构光视觉传感的V型焊缝图像预处理及拐点检测进行了研究。
- The DAC transfers the data stored in EPROM to the gate of MOS transistor so as to control the bias current, and tune the responsivity of detector and dummy detector. 用数模转换器将存储在EPROM内的偏置电压输出到MOS管的栅极上,实现对偏置电流的控制,调节探测元及补偿元的响应率。
- According to the calculation method of V groove's offset, width and height to acquire information and realize seam tracking. 根据V型焊缝偏中距离、焊缝宽度和焊缝高度的计算方法提取信息，实现焊缝的自动跟踪。
- The clock-controlled neuron MOS transistor is investigated firstly, and its improved technique is proposed in this paper. 摘要首先对钟控神经MOS管进行研究，提出了相应的改进方法。
- The paper analyzes the regarding of K value choice when applying type V groove to determine sensitivity,and the influence of block corner reflection on detection result. 本文分析了在应用V型槽确定基准灵敏度情况下,应注意K值选择和端角反射对检测结果的影响。
- By this concept, we design a photo MOS transistor which can be turn on only by illumination instead applying voltage on gate. 利用此概念我们期望可以设计出一个完全只需要利用照光，而不需要在闸极外加偏压就能驱动元件运作的金氧半电晶体光侦测器。
- Based on the investigation of the neuron MOS transistor, this paper proposes a new method for designing the multi-valued D/A and A/D converter. 摘要通过对神经MOS晶体管特性的研究，提出了一种多值D/A、A/D转换器设计的新方案。
- Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work. 最后，我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。
- The U-shaped ring of the inner side shell plate of the boiler, opposite the burner, was found to have 5 penetrating cracks, and the cracks were chiseled out with V groove and then covered by welding. 立式燃油辅锅炉炉胆下部弯边处在燃烧器对面发现穿透性裂纹五条，此次挖V型槽后用电焊焊妥。
- A high-performance low-power low-noise preamplifier working at 77K for IR detectors is designed by a single-ended folded-cascode structure and a MOS transistor operating in the linear region as feedback resistor. 利用single endedfolded cascode结构和MOS管工作在线性区做反馈电阻;实现了一种在77K工作的高性能低功耗、低噪声前置放大器.
- This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。 它具有“双负阻”特性和正阻区阻值易于控制等特点。
- v groove isolation polycrystal backfil v 型隔离槽的多晶硅填充
- In data output circuit, the MOS transistor works at a high speed when the supply voltage increases in low temperature. Then the variety speed of the output signal is so high that many disturbing signals are aroused. 数据输出电路在电源电压升高而温度很低的情况下;MOS管工作速度快;会使输出信号变化率过大而产生许多干扰信号.
- v groove isolation polycrystal backfill v 型隔离槽的多晶硅填充
- v groove metal oxide semiconductor v 型槽金属氧化物半导体
- The filter has several advantages such as low sensitivity, lower power supply, higher frequency,etc. PSPICE simulation at MOS transistor level is carried out and the simulation results show that the proposed circuit is feasible. 该滤波器具有灵敏度低、低电压供电、频带宽等优点, 并面向实际电路完成了MOS管级的PSPICE (集成电路的模拟程序) 仿真, 结果表明所提出的电路方案可行
