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- The path is not complete until its two terminals are joined. 直到两个端点接在一起，电路才是完整的。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- When the two terminal relays of the line act, action information can be transmitted to each other immediately. 两侧保护有动作时，通过公用电话网互传 保护动作信息，线路两侧试验系统根据两侧保护的动作情况送出相应于保护动作后的两侧电 流。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是针对鳍状场效电晶体元件做一个简介，说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来，并提出一个三闸鳍状场效电晶体元件。
- We prove that AIPO_4-CJ has layer-structure,the molar ratio of P/Al of the framework is equal to 2,and the P atom ofthe framework has two terminal oxygens by X-ray powder diffraction and four-circleX-ray diffraction. 经多晶 X 射线衍射;四圆单晶 X 射线结构测定;其骨架 P 与 Al 原子比等于2;骨架 P 原子上有两个端基氧.
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数，我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。
- Two terminal cancer patients with mechanical ventilation were transferred to our hospice ward after June 2002, both patients' consciousness were in a drowsy state.Their family also asked for DMV. 同年6月之后，亦有两位癌末病人转入安宁病房，但是他们已陷入昏迷状态。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 当金氧半元件缩小至深次微米区域，矽氧化层的厚度也随之变薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合电荷泵的基础上提出了一种8(7)管4倍电荷泵。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文从不同方面对BF_2~-注入MOS管低剂量率辐照效应进行了深入的研究。
- symmetrical two terminal pair network 对移四端网络
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 随着航天技术、核能技术及其核武器等高技术的迅速发展,越来越多的MOS器件需要在电离辐射环境中工作。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- The amount and direction of power flow may be easily controlled by adjusting the DC voltage at the two terminals. 通过调节两换流终端站的直流电压可以容易地控制潮流的数量和方向。
- Two terminations of iteration for the new algorithm are presented in this paper. 文中也给出了结束迭代的两个判定条件。
- The two systems of government are polar opposites. 这两种政体正好相反。
- First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices. 首先，增加了处理速度和功能密度的需求，推动IC制造者进一步缩减MOS装置的最小尺寸。
- Operation of the DUT can be verified by connecting an oscilloscope between yet another two terminals. 再通过另外两个端子连接一台示波器，即可验证DUT的工作情况。
- 今日热词
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- 深远海浮式风电平台 - deep-sea floating wind power platform
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- 京雄高速公路 - Beijing-Xiongan expressway
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- 农业及相关产业增加值 - the added value of agriculture and related industries
