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- threshold voltage shift 阈值电压漂移
- Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics 利用次临界伏安特性测定由于氧化空穴和界面性能产生的电离辐射感生金属氧化物半导体场应晶体管临界电压偏移分量的试验方法
- The input threshold voltage when the input voltage is falling. 在输入电压下降时的输入门限电压。
- JEDEC ? The input threshold voltage when the input voltage is falling. 在输入电压下降时的输入门限电压。
- It includes display circuit, control circuit, sensor circuit, voltage shift circuit, remoting circuit. 本系统的设计电路以凌阳单片机SPCE061A作为控制器。主要由显示电路, 功能控制电路、传感器电路、电压转换电路、遥控电路五部分。
- Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain. 此外，我们也在(110)方向的矽基板上作了相同的实验，并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。
- Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects. 给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
- By using a BCl3/Ar mixed gas, the positive voltage shift of the C-V curve is less than that of samples with pure Bcl/sub 3/. 由电容-电压曲线可知正电压将会偏移,且其偏移量小于使用纯三氯化硼气体。
- At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. 由于采用PMOS管作为开关管，传输过程中避免了阈值电压损失。
- Piezoelectric or stored charge effects: the creation of charge unbalances (and thus current flow or voltage shift) due to mechanical stress. 压电或储存电荷效应：由于机械应力产生的电荷不平衡（从而产生了电流或电压偏置）。
- The tests show that RTV can obviously improve the threshold voltage of secondary discharge. 实验表明RTV胶明显提高了高压阵二次放电阈值电压；
- A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. 该文提出了短沟DMOS阈值电压模型。
- In this paper, a charge pumping effect in CCD with floating diffusion region is introduced, which will lead to a voltage shift and a special charge transfer loss. 本文提出了一种CCD(电荷耦合器件)中的电荷泵效应。 这种效应会引起FDR(浮置扩散区)的电位漂移,并带来一种特殊的电荷转移损失。
- The optics characteristics of TN-PDLC mode were superior to others.It has lower threshold voltage and driving voltage. 我们发现在高分子分散的情况下，TN-PDLC的模式无论在穿透、对比与反射等光学特性上都优于其它两者，并且具有较低的阀电压与驱动电压。
- A continuous input pulse train triggers the monostable circuit, and a control signal modulates the threshold voltage. 持续不断的脉冲输入，导致单稳态的电路产生, 同时控制信号调整门限电压。
- Key words: comparators; adjustable threshold voltage; synchronous rectification; reverse currents. 关键词：比较器;阈值可变;同步整流器;输出反向电流
- A preliminary experimental study of a G-M counter under an additional RF vol-tage and a theoretical analysis of the Geiger threshold voltage under this conditionare presented. 本文报告了附加射频电压时盖格计数管的初步实验研究和盖格阈压的理论分析.
- The results of the threshold voltage model agree well with those of the experiment, and those of the 2-D simulator MEDICI. 借助二维仿真器MEDICI给出微米和深亚微米DMOS阈值电压的数值解,结果表明,解析值与实验结果和数值解吻合。
- This model can be applied to simulate the threshold voltage, current-voltage and C-V characteristics of Si/SiGe-p-MOSFET in LSI simulation. 在大规模集成电路设计中该模型可用于模拟预测SiGe-p-MOSFET的阈值电压、电流-电压及电容-电压特性。
- The simula-tion shows that the expression of threshold voltage for SOI structure,using depletion ap-proximation,is very simple and more accurate. 模拟计算还表明;对于薄硅膜的SOI结构;用耗尽层近似推出的阈电压公式是一个简单和比较准确的公式.
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