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- The input threshold voltage when the input voltage is falling. 在输入电压下降时的输入门限电压。
- JEDEC ? The input threshold voltage when the input voltage is falling. 在输入电压下降时的输入门限电压。
- Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects. 给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
- At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. 由于采用PMOS管作为开关管，传输过程中避免了阈值电压损失。
- The tests show that RTV can obviously improve the threshold voltage of secondary discharge. 实验表明RTV胶明显提高了高压阵二次放电阈值电压；
- A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. 该文提出了短沟DMOS阈值电压模型。
- The optics characteristics of TN-PDLC mode were superior to others.It has lower threshold voltage and driving voltage. 我们发现在高分子分散的情况下，TN-PDLC的模式无论在穿透、对比与反射等光学特性上都优于其它两者，并且具有较低的阀电压与驱动电压。
- A continuous input pulse train triggers the monostable circuit, and a control signal modulates the threshold voltage. 持续不断的脉冲输入，导致单稳态的电路产生, 同时控制信号调整门限电压。
- Key words: comparators; adjustable threshold voltage; synchronous rectification; reverse currents. 关键词：比较器;阈值可变;同步整流器;输出反向电流
- A preliminary experimental study of a G-M counter under an additional RF vol-tage and a theoretical analysis of the Geiger threshold voltage under this conditionare presented. 本文报告了附加射频电压时盖格计数管的初步实验研究和盖格阈压的理论分析.
- The results of the threshold voltage model agree well with those of the experiment, and those of the 2-D simulator MEDICI. 借助二维仿真器MEDICI给出微米和深亚微米DMOS阈值电压的数值解,结果表明,解析值与实验结果和数值解吻合。
- This model can be applied to simulate the threshold voltage, current-voltage and C-V characteristics of Si/SiGe-p-MOSFET in LSI simulation. 在大规模集成电路设计中该模型可用于模拟预测SiGe-p-MOSFET的阈值电压、电流-电压及电容-电压特性。
- The simula-tion shows that the expression of threshold voltage for SOI structure,using depletion ap-proximation,is very simple and more accurate. 模拟计算还表明;对于薄硅膜的SOI结构;用耗尽层近似推出的阈电压公式是一个简单和比较准确的公式.
- An example which uses the simulator to analysis the siatistical relation of threshold voltage of MOSFET to channel implanted dose is presented. 并用此程序分析了MOS场效应管阈值电压与沟道注人剂量的统计关系。
- Going back to the clipping diodes now, the diodes have no effect until the signal at the output is greater than the threshold voltage of the diode. 回到剪辑二极管现在;二极管没有影响到信号输出大于阈电压的二极管.
- Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accom-plished by an external clock signal. 它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。
- Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects. 给出了电子密度的隐式表达式和阈电压的显式表达式;它们都充分考虑了量子力学效应.
- This experimental observation can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility under HC stress. 这可以由金氧半场效电晶体在受到热载子效应后其临界电压，次临界摆幅，电子迁移率的变化来解释。
- The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage. 摘要推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
- It is found that the change of threshold voltage value fits in exponential law with absorbed dose, which is caused by the effect of space charge and interface charge. 产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；
