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- thin film gallium arsenide 薄膜砷化镓
- Diffused red, gallium arsenide phosphide red. 功能应用: Discrete LED indicator.
- Each gallium oxide thin film prepared in different deposition rate has its own optimal operation temperature. 不同的蒸镀速度所制备之氧化镓薄膜,有不同的最佳感测温度。
- This dissertation contains two parts which is included the Gallium antimony (GaSb) thin film and quantum dots grown by ALE-MBE process. 中文摘要本论文包含两大部分探讨使用ALE-MBE方式成长锑化镓薄膜与锑化镓量子点。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下,砷化镓等常用雷射材料的发光效率则是矽的一万倍。
- This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本论文研究在槽线架构下,不同馈入方式在频率响应上的影响。
- To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 产生电子射束的方法,是利用一道雷射轰击用砷化镓制成的标靶,每个脉冲会打出几十亿个电子。
- The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。
- In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
- Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
- Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
- New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 为像含有种种要素数层的金家砷化物和金家铝砷化物这样的集成电路的新基础材料,可能成为较快速的薯条因素。
- The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
- Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注册地址在北京经济技术开发区,总占地面积24000平方米,注册资金1500万美元,总投资金额4500万美元。
- This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
- Synthetic crystals of elements such as silicon, gallium arsenide, and germanium are used in transistors, rectifiers, and integrated circuits. 由矽、镓砷化物和锗合成的晶体用于电晶体、整流器和积体电路。
- Design of Interleaver with Cascaded Thin Film Filter[J]. 引用该论文 陈海星;顾培夫;李海峰;章岳光;沈伟东.
- Coffa's group has demonstrated light-emitting diodes (LEDs) that operate at room temperature with efficiencies as high as those of gallium arsenide devices. 寇法的研究团队已展示可在室温下运作的发光二极体(LED),效率和砷化镓装置不相上下。