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- thin film dielectric 薄膜电介质
- A new method about measurement complex permittivity of dielectric thin film(um) is present in second part. 由于目前关于薄膜态介质在微波段的介电特性的测量体系还未见报道，在第二部分针对薄膜的特点提出了多介质微扰法测量薄膜介电特性的新方法；
- The properties of the BT high dielectric composite thin film become worse as the forming voltage rises, even worse than the standard &anodized foil (SAF). 随化成电压的升高，钛酸钡高介电复合薄膜性能变差，直至低于标样的效果；
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Harmonized system of quality assessment for electronic components - Sectional specification: Fixed capacitors for direct current with electrodes of thin metal foils and a polycarbonate film dielectric. 电子元器件质量评定协调体系。分规范:直流电流用有薄层金属箔和一聚碳酸酯薄膜电介质电极的固定电容器。
- The dielectric constant and the tunability of BST thin films increase as the grain size and/or film thickness increase. 随着晶粒尺寸和膜厚的增加，BST薄膜的介电系数、介电系数变化率都逐渐增大。
- According to thin film polarization effect and eigenmatrix,the Fresnel retarder s achromatic width is expanded by evaporating dielectric membrane in two total-reflection surfaces of the rhomb. 根据薄膜的偏振效应,从薄膜的特征矩阵出发,通过在菱体的两个全反射面蒸镀光学介质膜的方法拓宽了菲涅耳菱体型相位延迟的消色差宽度。
- Several options are available for realizing the multi /demultiplexing function, such as the MDTFF (Multiple Dielectric Thin Film Filter), FBG (Fiber Bragg Grating) and AWG (Arrayed Waveguide Grating),etc. 现有的可以实现波分复用功能的器件结构有多种,如多层介质薄膜滤波器(MDTFF: Multiple Dielectric Thin Film Filter),光纤布拉格光栅(FBG: Fiber Bragg Grating),阵列波导光栅(AWG: Arrayed Waveguide Grating)等。
- Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
- The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
- We can classify thin films into four groups:thermal oxides,dielectric layers,polycrystalline silicon, and metal films. 我们可以把薄膜分成四组：热氧化物，介电质层，多晶硅，金属薄膜。
- The ferroelectric thin films had good crystallization behaviour,excellent dielectric and pyroelectric properties. 该类铁电薄膜具有良好的结晶特性、优异的介电和热释电性能。
- This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
- Design of Interleaver with Cascaded Thin Film Filter[J]. 引用该论文 陈海星;顾培夫;李海峰;章岳光;沈伟东.
- Respectively,the dielectric constants and dielectric tunabilities of BST and BST/LNO thin films were 811 and 58.9%,986 and 60.1%,respectively. 在室温和1 MHz条件下;BST薄膜和BST/LNO异质结构薄膜的相对介电常数和介电调谐率分别达811和58.;9%25、986和60
- PPN are non-indectively woud with Polypropylene film dielectric and aluminum foil electrodewith copper-clad steel leads and are epoxy resin coated. PPN无电感性，用聚丙烯膜介质和铝箔绕制，用铜覆盖钢引线作电极，用环氧树脂作外包装。
- PEI are inductively wound with polyester film dielectric and aluminum foil as the electrode with copper-clad steel leads and epoxy resin coated. PEI是感应式，用聚酯薄膜电介质和铝箔为电极绕制而成，导线采用镀锡铜包铜线，具有环氧树脂包封。
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
