您要查找的是不是:
- The temperature field effect of DEFAE is more significant than that of SEFAE and TNT. DEFAE的温度场效应要比SEFAE、TNT高;
- Keywords geneses of high-wax oil;dynamics process;geochemistry effect;temperature field effect;catalytic synthesis;migration fractionation effect; 高蜡油成因;动力学作用;地球化学效应;温度场效应;催化合成反应;运移分馏效应;
- Strength - The strength of the field effect. 强度-场的影响强度。
- temperature field effect 温度场效应
- vocal cord infection 声带感染
- Wider range temperature and 3D temperature field distribut... 正反熔宽模拟计算结果与实际的结果吻合。
- Yet this diffusion must take place against the frozen field effect. 可是,这种扩散必须在冻结磁场效应的背景下发生。
- Temperature field simulation of CMR bulk target in PLD[J]. 引用该论文 高国棉;陈长乐;王永仓;陈钊;李谭;宋宙模.
- Main Transistor: Schottky, MOS field effect, the three-regul... 深圳市中芯半导体发展有限公司>>类别:其他三极管广东省-深圳市2008-11-0811:43
- We will now treat some examples of the temperature field in the crust. 现在我们讨论一下地壳温度场的某些例子。
- Thin film transistor(TFT)is one type of field effect transistors(FET). 薄膜晶体管(TFT)是众多场效应晶体管(FET)中的一种。
- The simulating result shows that the acoustic wave has an obvious refractive effect, which is refracting from the high temperature field to the low temperature field. 仿真结果表明,温度梯度场中的声波路径发生了明显的弯曲,并且由高温区域向低温区域弯曲。
- The true temperature field is approximated by iterations with this formula. 用这个公式进行重复演算,就可以趋近于真正的温度
- Key words: Laser remanufacturing; Temperature field; Molten pool; CCD. 关键词:激光再制造;温度场;熔池;ccd。
- Aim To analyse the static temperature field ofthe solid rubber tire(SRT). 分析车辆实心橡胶轮胎稳态温度场。
- Study on temperature field of the material heated by monopulse laser[J]. 引用该论文 闫长春;顾济华;吴茂成.
- Simulation of Temperature Fields Based on DEM in Qinling Mts. 基于DEM的秦岭温度场模拟。
- Experiment on the field effect of Lorsban combined with BetaCypermethrin against Pieris rapae L. 毒死蜱与高效氯氰菊酯复配对菜青虫的田间药效试验。
- GLC model infrared texture temperature fields texture parameters. 标 签 GLC模型 红外纹理 温度场 纹理参数.
- Abstract: By theoretical analysis and experiment, it has been proved that injection photodetector is not a MOS field effect structure. 文摘:通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构,对文献[9]中得出的不同的结论和所讨论的问题阐述了自已的见解。