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- persistent current memory cell 持续电流存储单元
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- This counter indicates the current memory allocated in bytes on the garbage collection heaps. 此计数器指示在垃圾回收堆上分配的当前内存(以字节为单位)。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- These method can be described below: directly withdraw annex rotates , withdraw annex rotates by ramp ,current memory by using two speed controller. 通过对动态速降的研究,提出了几种解决动态速降的方法,分别是附加速度直接去掉法、附加速度斜率去掉法、用速度环双调节器的电流记忆法。
- The simulation and experiment show that current memory is the best method among those,and nearly has no speed droop during suddenly load_added. 经过仿真和实验比较,发现电流记忆法是最佳的一种方法,用此方法可以基本实现无速降。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- This type of relay is used to switch currents greater than a few amps and power levels of several hundred to several thousand watts. 这种类型的继电器被用于切换大于几个安培的电流，功率从几百瓦到数千瓦。
- The block becomes magnetic when the current is switched on. 通电时线圈即具磁性。
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- The loop becomes magnetic when the current is switched on. 通电时线圈就会有磁性。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Voltage Clamping. The circuitry necessary to protect relay contacts from excessive voltage caused by switching current into inductive loads. 电压箝位为保护继电器触点不受切换至感性负载的电流引起的太大电压损坏所必须的电路。
- I groped for the light switch in the dark room. 我在黑暗的房间里摸索着找电灯开关。
- Unlike switching current signals to an ammeter, switching a current source to multiple loads usually does not require maintaining the current path at all times. 与将多个电流信号切换至单台安培表不同，将一个电流源切换至多个负载通常不需要任何时候到维持电流通路的连续性。
