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- structure silicon on isolant 绝缘体上硅结构
- structure silicon on isolate 绝缘体上硅结构
- Effect of silicon on effective nutritive element in soil was examined. 本文研究了硅元素对土壤中有效营养元素的影响。
- The turnaround on isolating Syria is one thing. 孤立叙利亚就是极好的例子。
- Do not use Permatex or RTV silicone on the metal flange surface. 不要在金属法兰表面使用Permatex或RTV硅树脂。
- What preparation should you make before putting on isolation gown? 穿脱隔离衣前要作什么准备?
- Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiation-hardening, no parasitic capacitance and latch-up effect. 绝缘体上生长的薄单晶硅膜(SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容，并能有效地提高硅集成电路的速度和集成度，在深亚微米VLSI技术中，具有很大的优势和潜力。
- I had the bacteria in lung, and laid on isolate for nealy a month. 肺部病菌感染，被隔离了近一个月之久。
- Effect of calcium and silicon on growth of and nutrient uptake by wheat exposed to simulated acid rain. 钙、硅对酸雨胁迫下小麦生长和养分吸收的影响。
- Studies on Isolation and Purification of Fucoidan from Laminaria sp. 海带岩藻多糖的分离与部分性质研究。
- The influences of silicon on organosilicon-modified acrylate emulsion were also discussed. 论述了硅对有机硅改性丙烯酸酯乳液的影响。
- Considerations on isolation questions of maize seed production in Jiuquan? 对酒泉玉米制种隔离问题的思考?
- Effects of Silicon on Chlorophyll Fluorescence and Gas Exchange of Zizyphus jujuba cv. 与相似的文献。
- System studies on isolation and culture of protoplasts in Solanum tuberosum L. 马铃薯原生质体游离与培养体系的研究。
- For more information on isolation levels, see Isolation levels and consistency. 有关隔离级别的详细信息,请参见隔离级别和一致性。
- Reviews of Studies on Isolation and Culture of Shiraia bambusicola Henn. 竹黄的分离培养研究进展。
- Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 顶部硅膜-生产半导体电路的硅层,位于绝缘层顶部。
- Meaning of modulus of structure silicone sealant, which used to building curtain wall, determination and selection of maximum, minimum module are discussed. 指出玻璃幕墙用硅酮结构密封胶模量的意义及最高模量、最低模量的确定和选择。
- A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32. 消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
