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- stacked gate structure 叠栅结构
- Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated. 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ;并对其性质进行了研究 .
- The spillway and the gate structure optimization schemes, and the design plans for the gate lifting power and the retention ability were put forward respectively. 通过该项研究,提出了泄水道及闸门结构优化方案及闸门启门力、持住力设计等咨询意见,并被工程采纳。
- The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do. 结果表明 ;Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ;这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 .
- It is possible to fabricate ISFET entirely using CMOS process.The gate structure of the ISFET is a multilayer,which consists of insulator,poly and metal. 完全用CMOS工艺实现离子敏场效应型晶体管(ISFET)成为可能,这种ISFET的栅极结构是由绝缘体、多晶硅、金属层叠起来,称之为多层栅结构。
- The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime. 结果表明 ;同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ;前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .
- By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT=1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. 在国内首次将等效氧化层厚度为1·7nm的N/O叠层栅介质技术与W/Ti N金属栅电极技术结合起来;用于栅长为亚100nm的金属栅CMOS器件的制备.
- For any existing dam or sluice gate structure which hinders navigation,the corresponding construction unit shall be ordered by the people's government at or above the county level to take remedial measures within a stipulated time limit. 现有的碍航闸坝,由县级以上人民政府责成原建设单位在规定的期限内采取补救措施。
- avalanche injection stacked gate mos 雪崩注入多层栅金属氧化物半导体
- For any existing dam or sluice gate structure which hinders navigation, the corresponding construction unit shall be ordered by the people's government at or above the county level to take remedial measures within a stipulated time limit. 现有的碍航闸坝 ,由县级以上人民政府责成原建设单位在规定的期限内采取补救措施。
- stacked gate avalanche injection 叠栅雪崩注入
- The active pixels have substantially the entire surface of the photodiode covered either by a gate structure or a field oxide, thereby minimizing the amount of surface damage to the photodiode. 有效象素拥有整个表面充分被门结构或场效氧化物覆盖的光敏二极管,从而能使光敏二极管的表面受到的损伤减至最少。
- Further, by means of investigation and admeasurement, theoretical analysis and finite element simulation, the security analysis of ancient brick-and-clay city gate structure are performed. 研究表明,基础不均匀沉降及芯土进水恶化对此类结构具有明显的不利影响;
- How much do all these figures stack up to? 这些数字的总和是多少?
- On the crown of the knoll where the oaks had stood, now was Bareness; and from there you could look out over the trees to the colliery railway, and the new works at Stacks Gate. 圆丘的顶上,从前有的话多橡树,现在一株也没有了。在那儿,你从树梢上望去,可以看见煤矿场的铁道和史曲门的新工厂。
- In this paper necessity for gate safety testing has been put forward as well as attentive problems aiming at the status of safety check for gate structures in reservoirs. 本文针对水库工程中闸门结构安全复核的现状,提出了安全检测的必要性及需注意的问题。
- The floor was stacked up with books. 地板上堆满了书。
- A man appeared at the castle gate in the guise of a woodcutter. 一个男子打扮成樵夫的模样出现在城堡的门口。
- The girl stacked the blocks with deliberation. 这个女孩从容地把砖堆砌起来。
- Did you remember to padlock the gate? 你是否记得用挂锁把大门锁上?