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- ZnO film got by spin coating as the electron transport layer, MEH-PPV as the hole transport layer, a new structure of electroluminescence device was fabricated. 并且对此结构的双层器件进行了不同颗粒尺寸的ZnO纳米颗粒薄膜的对比研究。;
- The spin coating is followed by a baking step to remove the solvent and, in some cases, to complete the polymerization. 接著以烘烤除去溶剂，有时候可以顺便完成聚合反应。
- When an inhomogeneous plane wave is introduced into a dense dielectric layer, it can bounce between the two boundaries. 把一非均匀平面波引进折射率较高的介质层时，它会在上下界面间来回地“弹”射。
- TiO_2 nano thin film was prepared on ITO glass substrate by dip coating and spin coating process. 以TiCl_4和C_(16)H_(36)O_4Ti溶胶为前驱体,分别采用旋转-涂覆法和浸渍-提拉法制备了纳米TiO_2薄膜。
- Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them. 允许从隧道流电压控制的浮动栅栅绝缘层氧化物通过分隔他们。
- We prepared two kinds of OLED devices by spin coating, which have three-layer structures[a:ITO/MEH-PPV/Al] and [b: ITO/MEH-PPV/Ca:Al]. 我们利用MEH-PPV为发光材料制备了两种结构电致发光器件:a.;ITO/MEH-PPV/Al和b
- Dual damascene technology of Cu / low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介绍了铜/低介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(DRAM)和逻辑电路器件中。
- The chemical is widely used in the production of LSI,VLSI and other semiconductors to remove photoresist edge bead that occurs during typical spin coat wafer processing. 该试剂用于清除匀胶后残留于硅片边缘及背面的光刻胶，已经广泛应用于中、大规模集成电路及其它半导体器件的生产。
- Especially, the quality of gate dielectric layer determines the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. 特别是闸极介电层的品质能决定ULSI电路的稳定度与电特性表现。
- We focus on how the processes in repaid thermal processor (RTP) affect the electrical characteristics quality of gate dielectric layer. 我们将会集中以快速热制程如何影响介电层电特性。
- The TiO_2 nano thin film prepared by spin coating process is white, while the TiO_2 nano thin film made by dip coating process is colorless and transparent. 以TICl_4为通过旋转.;涂覆法制备的纳米TiO_2薄膜;表观为白色不透明膜;而以C_(16)H_(36)O_4Ti为前驱体选用浸渍-提拉法制备的薄膜为无色透明膜。
- And the conclusion is presented too.It is easy to design and manufacture waveguide filter using dielectric layer PBG structures. 利用介质层PBG结构来制作波导滤波器具有设计简单、易于实现的显著优点。
- We show the reflection and transmission behaviors when SPPs propagate along the metallic surface with one dimensional dielectric layer coated. 我们进一步讨论了表面等离子体激元在一维结构正入射时的反射性质，以及完全带隙的构造，和初步的实验结果。
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。
- While the top electrode is located on the third dielectric layer, in which each third dielectric layer and its top electrode compose a stack structure. 而上电极是位于第三介电层上，其中由每一第三介电层与其上的上电极组成一个堆栈结构。
- Dual damascene technology of Cu/ low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介绍了铜/介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(RAM)逻辑电路器件中。
- In this thesis, a simple and effective slurry spin coating approach (as a patent applied by us) was developed for fabricating Sm0.2Ce0.8O1.9 (SDC) films for anode-supported solid oxide fuel cells. 本论文应用我们发明的简单;高效的浆料旋涂制膜方法;制备阳极支撑的固体氧化物燃料电池Sm0.;2Ce0
- In this thesis, we provide a new .fabrication: using nanoparticles to fabricate erbium doped luminescence thin film.We mix nanoparticles and use spin coating process to deposit it on a silicon wafer. 这篇论文提出新的制程方法：使用奈米粒子制作掺铒发光薄膜，利用奈米粒子混合旋布玻璃并旋涂于矽基板上。
- Takashi O., Luis B.M., Ferry I., Kikuo O.,“Fabrication of a large area monolayer of silica particles on a sapphire substrate by a spin coating method”, Colloids and Surfaces A, Physicochem.Eng. 王惠君，“以回应曲面法探讨溶胶-凝胶法制备奈米二氧化矽之参数影响”，中原大学化学工程学系，2004。
- I got a new coat in that store last week. 上礼拜我在那家店买了一件新外套。
