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- Pulse power with fast rise time technology was applied in many fields such as nuclear physics, electron beam, accelerator, laser, HPM etc. 高压大电流快脉冲技术在核物理技术、电子束、加速器、激光、HPM等许多现代科学技术领域都有广泛的应用。
- Quantum Effect Devices : Electron waveguides, single electron transistors, etc. 26量子效应元件:电子波导,单电子电晶体等。
- An amplifier with very wide frequency response which can amplify pulses without distortion of the short rise time of the leading edge. 频率响应极宽的一类放大器,可以无畸变地放大前沿上升时间短的脉冲。
- The concept of single electron transfer is used asan example to elucidate the reaction mechanism of aromatic nitration. 文中还以实例用此理论解释了芳烃硝化反应机理。
- Thus, even large values of capacitance shunting the input will have negligible effect on rise time. 所以,即使并联在输入端的电容很大,其对上升时间的影响也很小。
- Meschke and his Helsinki University of Technology peers were excited because they built the transistor as a single electron device. 麦斯科和他的赫尔辛基技术学院同事感到非常激动,因为 他们制造了单电子设备类的晶体管。
- The structures, principles, characters and applications of single electron transistors are clarified,based on the traditional theories. 基于传统单电子理论,阐述了单电子晶体管的结构、原理、特点及应用。
- Improved insulation protection against transient spikes, high frequencies, and short rise time pulses without increasing insulation thickness. 在不增加绝缘厚度的情况下,提高了抗瞬间冲击、耐高频性、耐陡升脉冲性。
- The measurement results show that the rise time is about 2.58ns and the decay time is about 55 ns of the EMP simulator output waveform. 测量结果表明此电磁脉冲模拟器可以输出前沿大约为2 58ns、衰落时间约55ns的双指数脉冲波。
- A method is proposed to exactly diagonalize the Hamiltonian of a N-layer quantum dot containing a single electron in each dot in arbitrary magnetic fields. 摘要用精确对角化的方法研究了处于外磁场中的N层单电子垂直耦合量子点系统,计算了基态跃迁随外磁场的变化关系。
- Transient characte-ristics of the HPT have been measured with 80 ps Gaussian pulse,and FWHM of the outputpulse is 1.20 ns with a rise time of 400 ps. 在 80 ps Gaussian光脉冲作用下;其输出脉冲上升时间为 400ps.;半峰宽为1
- We studied the ground-state-transition of a vertically coupled four-layer single electron QDs system under a magnetic field by the exact diagonalization of the Hamitonian matix. 摘要用精确对角化的方法研究了处于外磁场中四层单电子垂直耦合量子点系统。
- Rise time in a feedback picoammeter is a function of the physical or stray capacitance shunting the feedback resistance (RFB). 反馈型皮安计的上升时间是反馈电阻(RFB)上并联的物理电容或寄生电容的函数。
- The design and analysis of single electron device is also an important topic in this course, in order to lay a foundation for the students on nanoelectronics . 单电子元件之解析与设计亦是本课程重点,为学生筹备奈米时代之电子元件深厚的基础。
- Due to the high degree of voltage amplification, this stage regenerates the voltage swing and the rise time of the incoming signal. 因电压放大的高倍数,这一级一则改变输入电压的摆幅,二则改变引入信号的上升时间。
- Ionized by energetic starlight, a hydrogen atom emits the characteristic red H-alpha light as its single electron is recaptured and transitions to lower energy states. 被高能星光电离后,在重新捕获失去的电子并跳跃到较低能量状态时,氢原子放射出特有的红色氢-阿尔发射线。
- The rise time of a feedback picoammeter is normally limited by the time constant of the feedback resistor (RF) and any shunting capacitance (CF). 反馈皮安表的上升时间通常受反馈电阻器(RF)和并联电容(CF)形成的时间常数的限制。
- Used in Electronic lighting ballasts and High voltage power Supplies of High frequency and High pulse rise time circuits. 适用于电子镇流器和电源开关等高频脉冲和高频振荡电路中。
- Experimental results shows the shaped 2.2 ns pulse has a rise time less than 50 ps,and it is precisely synchronized with the 100 ps pulse with time jitter less than 4 ps. 实验测得了该系统输出的2.;2 ns整形光脉冲具有小于50 ps的上升沿;与100 ps啁啾脉冲的时间抖动小于4 ps。
- The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object. 以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。