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- A Novel Silicon Photoelectric Negative Resistance Device 一种新型结构的光电负阻器件
- The invention belongs to the photoelectric device technical field, which is a flexible cantilever micro mechanical optical switch. 本发明属于光电器件技术领域,是一种柔性悬臂微机械光开关。
- silicon photoelectric cell slice 硅光电池片
- silicon photoelectric transistor 硅光电晶体管
- semiconductor photoelectric device 半导体光电器件
- In the computer related sense, a term that denotes sensing and input by means of photoelectric devices. 在与计算机相关的意义中,用来修饰或说明用光电设备进行感测和输入的术语。
- In the computer-related sense, a term that denotes sensing and input by means of photoelectric devices. 在与计算机相关的意义中,用来修饰或说明用光电设备进行感测和输入的术语。
- Research of the Wide Barrier Photoelectric Device 宽势阱半导体光电器件研究
- In the process of photoelectric technology industrialization, the importance of photoelectric devices increasingly appears. 在光电技术产业化的过程中,光电器件的重要性日益现显。
- CCD(Charge Coupled Devices) is a semiconductor photoelectric device with particular performance, which is applied widely in some fields such as camera and industry measurement and so on recently. CCD (电荷耦合器件)是一种性能独特的半导体光电器件,近年来在摄像、工业检测等科技领域里得到了广泛的应用。
- Charge Coupled Devices (CCD) is a photoelectric device with high performance, which is widely applied in many areas, including astronomical imaging, entertainment and manufacturing, etc. 电荷耦合器件(CCD)是一种高性能的半导体光电器件,近年来在天文摄像、消费电子、工业检测等领域里得到了广泛的应用。
- Charge Coupled Devices(CCD) is the new type semiconductor integrated photoelectric device developed at the beginning of the seventies of the 20th century. It was put forward at the first of 1970 by W. 电荷耦合器件CCD(Charge Coupled Devices)是20世纪70年代初发展起来的新型半导体集成光电器件;它是美国贝尔电话实验室的W.
- A new power integrated light activated MOS controlled multiway switch is described,which consists of bi directional thyristors,MOS and photoelectric devices. 介绍了一种新型功率集成光激MOS控制多路开关,它由双向晶闸管、MOS器件、光电器件组成。
- Application: Sulphuric acid, fertilizer, papermaking, dynamite and rubber. It is also used for the manufacture of II-VI compound semiconductor, photoelectric devices and etc. 主要用途:硫酸,化肥,造纸,炸药和橡胶。也用于生产II-VI半导体,光电装置等。
- photoelectric device sensitivity 光电器件灵敏度
- Light Intensity Performance Comparison between Silicon Photoelectric Generator and CCD 硅光电池与电荷耦合器件测量光强性能比较
- In this paper,we introduces a photoelectrical device which use the charge-roast sensor and data processing technology with computer and measure inside diameter of bigger barrels. 利用数显光栅传感器和计算机数据处理技术来检测大口径管道内径尺寸的光电设备。
- The photoelectric devices, which contained laser and detector were widely used in optical-fiber communication, laser-printer, laser-length-detector, laser instrument and the reading and writing of the CD ROM. etc. 半导体光电器件(激光器、探测器)广泛应用于光纤通信、激光打印、激光测距、激光仪器、以及光盘的“读”、“写”与探测等等。
- ZnO semiconductor is a good material with much application in photoelectricity device due to its wide gap of 3.37eV and large exciton binding energy of 60meV. 宽禁带ZnO半导体为直接带隙,室温带隙为3.;37eV,且束缚激子能高达60meV,是一种具有很大潜在应用价值的紫外半导体光电器件材料。
- The silicon chips are less than a millimeter thick. 这些矽片厚度不足一毫米。