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- N type and P type 4"-6"silicon epitaxial wafers. 4"-6"N型和P型各类硅外延片。
- There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation. 在LED生产过程中,主要有外延片生长、芯片和封装三个环节。
- From the point of view of industrial chain, value of epitaxial wafer accounts for 70% of the total. 从产业价值链的情况看,外延片的生长要占到70%25的价值。
- Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry. 高质量的外延片已经成为中国LED产业发展的主要制约环节。
- But in some key procedures, especially epitaxial wafer, there is still great gap compared with international first class level. 但是在关键环节,尤其是外延片的生长环节,与世界一流水平还有较大的差距。
- The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF silicon epitaxial planar tuning diode made by NEC company. 结果表明WB30型VHF/UHF硅电调变容管已与日本NEC公司的VHF/UHF硅外延平面电调变容管1S2209/1S2208的性能相当.;电调变容管的统调特性及其串联电阻直接与电视高频头的增益相关
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究; 并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。
- In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results. 本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型,理论和实验结果吻合。
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力;发现;随着ESD应力次数的增加;器件的放大特性hFE逐渐退化;并且当电压达到一定水平;多次的ESD可以使器件失效.
- silicon epitaxial planar transistor 硅外延平面晶体管
- Silicon Epitaxial Planar Capacitance Diode 硅外延平面变容二极管
- silicon epitaxial highcurrent switching diode 硅外延大电流开关二极管
- low-pressure silicon epitaxial technique 低压硅外延生长技术
- Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers. 公司成立初期,主要为国内外知名半导体厂商生产外延片及芯片。
- silicon epitaxial planer transistor 硅外延平面晶体管
- Silicon on sapphire epitaxial wafers GB/T14015-1992硅-蓝宝石外延片
- The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings. 四探针法用在非常薄的样品,例如外延晶圆片和导电涂层上。
- Now people can produce a wafer silicon. 现在人们能够生产一种硅晶薄片。
- silicone epitaxial planar transistor 硅外延平面晶体管
- Hot plate with silicon wafer lowered to heating position. 加热板与矽晶圆降低至加热位置。