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- resonant tunneling thin films 共振隧穿纳米薄膜
- resonant tunneling thin film 共振隧穿薄膜
- Tunnel thin film characteristic matrix 隧道薄膜的特性矩阵
- Keywords quantum well thin film;resonant tunneling structure;macro-accelerometer;Meso-piezoresistance effect;electromechanical character;Raman;experiment design and test; 量子阱薄膜;共振隧穿结构;微加速度传感结构;介观压阻效应;机电特性;拉曼;实验设计和测试;
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT/PEK-C were prepared. 制备了纳米复合材料薄膜PT/PEK-C。
- The filtering effect could be amplified by placing the ferromagnet in a resonant tunnel diode. 若将铁磁体放入共振穿隧二极体中,可以放大过滤效果。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- The accelerometer is based on Meso-piezoresistanceeffect of GaAs/AlAs RTD (Resonant Tunneling Diodes). 该加速度计是基于 GaAs/AlAs 共振隧穿二极管(RTD)的介观压阻特性,即在力学信号作用下,RTD 结构应力分布发生变化;
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- The resonant tunneling of three-tile quasiperiodic superlattices has been in-vestigated in this paper. 本文研究了三元准周期超晶格的电子共振隧穿性质。
- The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported. 报道了InP衬底AlAs/In0.;53Ga0
- A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider. 摘要提出了一种基于共振隧穿二极管的新型边沿触发D触发器并将之用于构成二进制分频器。
- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- The morphology of SnO2: Sb thin films was researched by AFM. 采用AFM分析了SnO_2:Sb的表面形貌。
- Conventional resonant tunnel diodes allow currents to flow at a specific voltage, one at which the electrons have an energy that is resonant with the tunneling barrier. 传统共振穿隧二极体在特定电位下可让电流通过,此时电子的能量共振于(即等于)穿隧位障。
- Eroding of lead zirconate titanate (PZT) thin films[J]. 引用该论文 蔡长龙;李明;马卫红;刘卫国.
- The structure of parallel combination of resonant tunneling diode(RTD)and high electron mobility transistor(HEMT)is a basic element of recent high speed RTD digital circuit. 由共振隧穿二极管(RTD)与高电子迁移率晶体管(HEMT)相并联组成的结构是构成当前RTD高速数字电路常用的基本单元。
- Applications of VO2 thin films on laser protection[J]. 引用该论文 宁永刚;孙晓泉.