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- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- The results discover that AlInGaAs strained quantum well lasers excel AlGaAs laser in slope efficiency,threshold current and characteristic temperature and so on. 结果发现AlInGaAs应变量子阱激光器在斜率效率、阈值电流、特征温度等方面随温度变化的特性都优于AlGaAs激光器.
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- semiconductor quantum well laser diode 量子阱半导体激光管
- Low Threshold Lasing in Microdisk Quantum Well Laser 碟型量子阱微腔激光器的低阈值激射
- Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement 高功率半导体量子阱激光器测试中的灾变性损伤
- Chirping noise of single quantum well laser diodes under small signal modulation 单量子阱激光器小信号调制时的啁啾噪声
- Effect of Auger recombination on the threshold current of strained quantum well laser 俄歇复合对应变量子阱激光器阈值电流的影响
- Effect of Growth Temperature on The Performance of InGaAs/GaAs Strain Single Quantum Well Laser by MBE MBE生长温度对InGaAs/GaAs应变单量子阱激光器性能的影响
- Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs GaAs single quantum well laser diodes 单量子阱激光二极管电子发射和DX中心的影响
- QUANTUM WELL LASERS WITH VERY LOW THRESHOLD CURRENT AND ITS APPLICATIONS 甚低阈值量子阱激光器及其用途
- SCH quantum well laser SCH量子阱激光器
- quantum well laser 量子井激光器
- multiple quantum well laser 多级量子壁激光器
- Materials Design and Grow of Strained Quantum Well Lasers with High Characteristic Temperature 高特征温度应变量子阱激光器材料设计与生长
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Study on the chaotic synchronization communication of different structure SCH quantum well lasers SCH量子阱激光器的混沌同步通信研究
- Calculation and Analyses of Cross-Saturation Characteristics of GaN Quantum Well Lasers GaN基量子阱激光器交叉饱和特性的计算与分析
- Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers InGaN量子阱激光器增益和阈值电流的理论计算
- Theoretical Calculation of Polarization Dependent Gain Saturation in GaN Quantum Well Lasers GaN基量子阱激光器极化相关增益饱和特性的理论计算
