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- power MOSFET device 功率MOSFET器件
- Features: trench FET Power MOSFET 100% Rg Tested. 特点:沟道场效应管;功率MOS晶体管.
- This constant?current power supply uses a power MOSFET as the current control device, and which uses the principle of negative feedback to adjust and stabilize the output current. 该恒流源采用功率MOSFET作电流控制元件,运用负反馈原理稳定输出电流。
- The final control circuit adopts power MOSFET as current control device, which uses the principle of negative feedback to adjust and stabilize output current. 末级电路采用功率MOSFET作电流控制元件,运用负反馈原理稳定输出电流。
- A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅栅结构的自对准离子注入工艺,研制成功了源漏击穿电压BVDS为120V、输出功率5.;1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。
- Skilled with MOSFET device engineering, especially in its reliability and performance aspects. 具有MOSFET元件工程技能,其中,尤其著重于可靠度及高效能方面.
- The power MOSFET suffers a peak current of IIN plus IF and a peak voltage of VIN plus VO. 功率MOSFET要承受一个峰值为IIN加上IF的电流还有一个峰值为VIN 加上 VO的电压。
- The discussion woudl be centred on more power MOSFET parallel connection,avoiding parasitic oscillation and the measures of anti-interference. 重点讨论了多个功率场效应管的并联,寄生振荡的防止及抗干扰措施。
- SJ MOSFET is a new development power MOSFET based on the combination of VDMOS and SJ (Super Junction), and called the new milestone of power MOSFET. SJ MOSFET是由VDMOS结构与超结(SJ)相结合而发展起来的一种新型的功率MOSFET,被称为功率MOSFET的里程碑,有广阔的发展前景,目前在国内尚无产品开发。
- The company after incorporating still will surmount two afore-mentioned manufacturers, become the biggest power MOSFET supplier. 合并后的公司还将超过上述两家厂商,成为最大的功率MOSFET供给商。
- It is designed with outputs for a direct high current gate drive of an all N-channel power MOSFET three phase bridge with a maximum supply voltage of 38 V. 该产品可为全N通道功率MOSFET三相桥的直接大电流门极驱动提供输出,最大电源电压为38 V。
- Hu Zongbo,Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifier[J].Proceedings of the CSEE,2002,22(3):88-93. [2]胡宗波;张波.;同步整流中MOSFET的双向导电性和整流损耗分析[J]
- Hu Zongbo, Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifiers[J].Proceedings of the CSEE, 2002, 22(3): 88-93. [3]胡宗波;张波.;同步整流器中MOSFET的双向导电特性和整流损耗研究[J]
- The NiSi salicidation process is, then, incorporated into the fabrication of novel self-aligned nanowire MOSFET devices structure. 然后镍化矽被应用于新颖的元件结构里--自对准奈米线金氧半场效电晶体。
- AC-DC,DC-DC?,Thyristors ,Diodes,HEXFET Power MOSFETs? DC转换器?,半导体闸流管,二极管,场效应晶体管
- With the dimensions of MOSFET devices continue to shrink, the reliability of ultra-thin oxide plays an important role in the development of semiconductor devices. 摘要:随著金氧半场效应电晶体尺寸持续的缩小,超薄氧化层在半导体发展的过程上,扮演著重要的角色。
- The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons. 用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
- In this paper, the principle, system stucture and the design of both hardware and software of a kind of power MOSFET the meaning of the test apparatus are introduced, which is based upon MCU. 摘要介绍了以单片机为核心的功率MOSFET测试仪的原理、系统结构及具体的软硬件设计。
- Hot carrier injection (HCI) test of the MOSFET devices, electron migration (EM) test of the metal interconnects and gate oxide integrity (GOI) test are the most popular WLR test items. 半导体集成电路的晶圆级可靠性的主要测试项目包括MOS器件的热载流子注入测试、栅氧化层完整性测试以及金属互连线的电迁移测试。