您要查找的是不是：
- porous silicon layer 多孔硅层
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- Recent progress of electroluminescence based on porous silicon was reviewed. 摘要综述了多孔硅电致发光研究进展。
- Raman and photoluminescence studies of porous silicon were performed using a highly sensitive confocal microprobe Raman system, which allows the z direction layer analysis of the sample surface. 运用高灵敏度的共焦显微拉曼系统研究了多孔硅在纵向的拉曼效应和光致发光的性质。
- The increases of vacancy defects might be that the extension of structures of porous silicon towards inner layer with anodization time and caused more vacancy defects in inner layer. 空位缺陷增多的原因可能是随着阳极氧化时间的延长，多孔硅结构向内层延伸增加了空位缺陷。
- Abstract: The influnence of irradiation on porosity during preparation of porous silicon( PS) is studied in this paper. 文摘:研究了多孔硅制备过程中光照对孔隙率大小的影响。
- In 1990, Canham detected that porous silicon could emit visible light at room temperature. 1990年,Canham发现了多孔硅(PS)在室温下发射相当强的可见光。
- Blue|emitting porous silicon(PS) prepared by hydrothermal etching was treated by rapid thermal oxidation (RTO) process. 对用水热腐蚀技术制备的、具有蓝光发射的多孔硅样品在快速热氧化 (RTO)处理前后其光致发光谱、硅纳米颗粒的大小及尺寸分布变化进行了研究 .
- This article has reported a new method to prepare porous silicon by using raction kettle without corrosive acid. 摘要报道一种在无酸性腐蚀液的条件下用反应釜制备多孔硅的新方法。
- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层-在绝缘层下部的晶圆片,是顶部硅层的基础。
- Tunable Superstructures were obtained in hydrothermally etched iron-passivated porous silicon (IPS). 摘要采用水热腐蚀技术制备的铁钝化多孔矽表面具有可调超结构。
- Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied. 研究了多孔硅衬底微波CVD金刚石薄膜的制备工艺及其场电子发射特性。
- This paper presents the dielectric and mechanical properties of porous silicon nitride ceramics. 研究了预烧结对反应烧结多孔氮化硅陶瓷的介电性能和力学性能的影响。
- The impact of SOI wafers is minor to the performance of an inductor because small displacement current and small eddy current are induced in the thin silicon layer. 而SOI晶片对电感的影响并不大，因为在薄膜矽层内的位移电流和涡电流都很小。
- Study on properties of electroluminescence from porous silicon heterojunction device[J]. 引用该论文 杨亚军;李清山;刘宪云.
- Abstract: Porous silicon (PS) was prepared by anodically etching of n-type silicon in hydrofluoric acid solution. 文摘:多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。
- On the other hand, porous silicon with silica gel can emit blue light afterirradiated by laser with given power density. 采用一定功率密度的激光处理覆盖有二氧化硅凝胶的多孔硅的方法,获得了在不影响其机械强度的前提下的多孔硅的蓝光发射。
- In-situ porous silicon nitride ceramics were prepared directly by the use of silicon dioxide through the carbothermal reduction in nitrogen. 本课题就是利用二氧化硅在氮气中的碳热还原反应，一次原位直接制备氮化硅多孔陶瓷预制体。
- However, this situation can be improved when depositing a thin pure silicon layer epitaxially on the top of the ribbon, so we got low cost but relatively high efficiency solar cells. 然而如果在这种硅片表面沉积一层高纯硅，然后再在上面做电池，则既保证了效率又大大降低了成本。
- The goal of this study is to synthesize materials which emit white light. Porous silicon and zinc oxide are selected as luminescent materials. 中文摘要本论文之目的是在多孔矽上堆叠氧化锌，藉由结合多孔矽与氧化锌两种发光材料，以研制出能发白光的机构。
