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- The processing parameters for manufacturing amorphous silicon film were studied.The polycrystalline silicon film was obtained by annealing the amorphous silicon film. 研究了制备性能优良非晶硅薄膜的工艺参数,对薄膜进行高温退火得到多晶硅薄膜。
- Polycrystalline Silicon Films Prepared by Rapid Photo-thermal Annealing 快速光热退火制备多晶硅薄膜
- Preparation of Polycrystalline Silicon Films by Aluminium Induced Crystallization at Low Temperatures 铝诱导晶化法低温制备多晶硅薄膜
- Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature 金属铝诱导法低温制备多晶硅薄膜
- Influence of Impurity Distribution on the Electrical Properties of the Polycrystalline Silicon Films 杂质分布对多晶硅薄膜电性能的影响
- Control of grain size during low-temperature growth of polycrystalline silicon films 多晶硅薄膜低温生长中晶粒大小的控制
- Study on Polycrystalline Silicon Films Prepared by Rapid Photo-thermal Annealing 用快速光热退火制备多晶硅薄膜的研究
- CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS 多晶硅薄膜低温生长中的表面反应控制
- Polycrystalline silicon thin film fabricated with novel laser crystallization. 多晶硅薄膜的新型激光晶化制备方法。
- polycrystalline silicon films 多晶硅薄膜
- Why is high purity polycrystalline silicon necessary? 为啥多晶硅需要高纯度？
- We can classify thin films into four groups:thermal oxides,dielectric layers,polycrystalline silicon, and metal films. 我们可以把薄膜分成四组：热氧化物，介电质层，多晶硅，金属薄膜。
- The polycrystalline silicon(Poly-Si) films are widely used in energy sources and informational science field. 多晶硅薄膜材料已广泛应用于太阳能电池和集成电路制造等领域。
- It is found that CFA can not obtain the crystalline films, while RTP is useful for the formation of polycrystalline silicon. 结果表明，常规热处理并不能使薄膜晶化，而利用快速热处理可以使薄膜得到晶化。
- Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures. 采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
- Polycrystalline silicon is an aggregation of small silicon crystals. 多晶硅是细小硅晶的集合体。
- The solar panel is composed of imported monocrystalline &polycrystalline silicon with over 15% transferrability. 太阳能电池晶片采用转换率在15%25以上的进口单晶或多晶硅。
- Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace. 加热室是多晶硅铸锭炉的关键部件之一。
- Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber. 多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
- A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. 本发明公开了一种用于LCD的多晶硅TFT及其制造方法。
