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- Application of PN junction temperature compensation in pressure transmitter PN结温度补偿法在压力变送器中的运用
- PN Junction temperature sensor PN结温度传感器
- pn junction temperature pn结温
- Study on overlapping principle of PN junction in nonlinear zone of. 光电池非线性区PN结光生伏特效应的研究。
- He Ne laser speckle photography technology can measure the temperature of PN junction of the Laser diode in line,for controlling the emit wavelength. 用He?Ne激光束的散斑技术可以实时测量激光二极管PN结的温度，达到控制其发射波长的目的。
- By the use of temperature characteristic of the semiconductor PN junction thermocouple cold end compensating circuit was designed. 利用晶体管PN结温度特性设计出热电偶冷端补偿电路,并对常用热电偶冷端补偿方法进行比较分析。
- In the course, the formula of PN junction as a sensor is corrected on the basis of the variation of the width of the semiconductor forbidden with temperature. 在分析过程中，考虑了半导体材料禁带宽度受温度变化所产生的影响，进而对PN结的传感理论进行了修正。
- But linking the two semiconductors, among them the formation of a "PN junction. 但这两种半导体连接起来的时候，它们之间就形成一个“P-N结”。
- From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained. 通过测量结果和计算结果的归一化比较，获得了其表面复合速率。
- A Study on the Si Color Sensor with Double PN Junction for Panchromatic Wave Band[J]. 引用该论文 韦冬青;陈炳若;钟茗;李云虎;杨雨佳.
- temperature characteristic of pn junction pn结的温度特性
- P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
- Details P / N junction temperature measurement principle and method of temperature measurement for personnel engaged in a certain reference value. 详细介绍了P/N结测温的原理和方法，对于从事温度测量的人员有一定的参考价值。
- Based on the systematic study and analysis, alight spot scanner photo-current (PC) measurement technique was set up to measure the interface properties of silicon pn junction. 摘要通过系统的研究分析，建立了应用光探针的光电(PC)测量方法，应用镜像法和点源产生近似原理建立了物理模型，并进行了系统的理论分析。
- This article analyses the difficulty in measuring the IGBT junction temperature and presents a new measuring method based on a curve fitting theory. 分析了变频设备中IGBT结温测量的困难,基于曲线拟合理论提出了测量IGBT结温的新方法,并对具体问题做了深入讨论。
- In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction. 为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
- Bipolar transistors of the type of 3DD820 and 3DD15D (with F2 metal-pack) are taken as an example in the study to verify the method of controllable junction temperature. 以3DD820,3DD15D（F2金属封装）双极晶体管为实验对象，对结温可控的晶体管稳态工作寿命试验方法进行了验证。
- This phenomenon is called the excessive thermotaxis effect of low current.Based on these characteristics, the uniformity of the junction temperature distribution is studied. 利用这一特性可以研究晶体管结温分布的不均匀性，计算结温分布的不均匀度，对半导体器件可靠性分析具有重要的意义。
- Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon pn junction protected by organic materials or inorganic passivation films were measured. 采用此方法，测量了台面型高压硅半导体器件的无机钝化和有机保护界面的表面复合速率。
- The firmware combines this coordinate with its preprogrammed knowledge of the characteristics of the LEDs in the system, along with LED junction temperature measurements. 固件将该坐标与系统中预编程的LED特征值结合在一起，并集成了LED结点温度测量功能。
