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- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 标 签 GaP:N液相外延材料 光致发光 发光区域。
- liquid phase epitaxial method 液相外延法
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.
- Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J]. 引用该论文 饶海波;成建波;黄宗琳;李军建;方官久.
- Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE). 利用喇曼光谱和光致发光谱 ;对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .
- ZnO thin films can be deposited by various methods, such as sputtering, e-beam evaporation, spray pyrolysis, sol-gel, pulsed laser deposition (PLD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), etc. 制备ZnO薄膜的方法有很多,包括:溅射方法(sputtering)、金属有机气相外延(MOVPE)、分子束外延(MBE)、脉冲激光沉积(PLD)、原子层外延(ALE)、等离子体加强化学气相沉积(PECVD)、溶胶-凝胶法(soll-gel)、喷涂热解法(spray pyrolysis)、电子束蒸发法(e-beam evaporation)等等。
- A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity. 本文描述了一种汽相外延Ga_xIn_(1-x)As的技术:在AsCl_3/Ga/In/H_2体系中,采用Ga/In合金源汽相生长Ga_xIn_1As。
- metallo organic vapor phase epitaxy 有机金属汽相外延
- Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated. 研究了在刻有图形的GaN“衬底”上用HVPE方法侧向外延生长 (ELO)GaN的结构特性。
- LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x InSb_(1-x)Bi_x的液相外延
- The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. 用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。
- Hydride Vapor Phase Epitaxy (HVPE) HVPE
- Metal Oxide Vapour Phase Epitaxy 金属氧化物蒸汽相外延
- metalorganic vapor phase epitaxy 金属有机物气相外延
- X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy X射线分析氢化物汽相外延法生长GaN薄膜
- Vapor Phase Epitaxy of Hg_(1-x)Cd_xTe on CdTe substrates 在CdTe衬底上汽相外延Hg_(1-x)Cd_xTe
- THE CHARACTERISTICS OF ACEL IN ZnS:Er~(3+) THIN FILMS GROWN BY ATOMIC LAYER EPITAXY METHOD (ALE) 利用原子层外延方法制备的ZnS:Er~(3+)薄膜的交流电致发光特性
- In this work, more attention has been paid to the nano-twins and the evolution of solid phase epitaxial regrowth in the annealed specimens. 本实验将研究重点置于离子布植矽退火后的双晶结构以及固相磊晶成长的的演变。
- Design and making of hydride vapor phase epitaxy system for growing GaN GaN氢化物气相外延生长系统的设计与制作