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- peak reverse gate voltage 峰值反向门电压
- reverse gate voltage 逆门极电压
- rated non-repetitive peak reverse voltag 额定非重复反向峰值电压
- non repetitive peak reverse voltage 不重复峰值反向电压
- circuit repetitive peak reverse voltage 电路反向重复峰值电压
- Maximum Recurrent Peak Reverse Voltage 最大重复峰值反向电压
- Maximum repetitive peak reverse voltage 最大可重复峰值反向电压
- rated repetitive peak reverse voltage 额定重复反向峰值电压
- non-repetitive peak reverse voltage 反向不重复峰值电压,非重复性反向峰值电压
- In the measurement with duration of 6 hours, the hydration depth of a PECVD SiO2 layer was about 500?? and the maximum gate voltage drift of a PECVD SiO2-gate ISFET was 81mV. 六小时的量测结果显示,电浆辅助化学气象沈积的二氧化矽材料层的水合深度大约是500埃,并且最大的闸极电压飘移是81毫伏。
- The peak forward velocity(PFV),peak reverse velocity(PRV),acceleration time(AT),and deceleration time(DT) were determined and compared. 对正向波峰速(PFV)、反向波峰速(PRV)、加速时间(AT)和减速时间(DT)进行了测量和比较。
- circuit non-repetitive peak reverse voltage 电路反向不重复峰值电压
- A particular over-current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate-emitter resistance circuit is put forward. 设计了过电流保护驱动电路,讨论了栅射集电阻对降栅压过程的影响,并提出一种可变栅射集电阻电路。
- The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load. 实验结果表明 ;多元胞 TMCT (6 0 0 V;有源区面积0 .;2 m m2 )的开态压降在 30 0 A / cm2 时为 1
- PECVD deposited SiO2 can lead to a critical hydration effect such that the gate voltage drift of a PECVD SiO2-gate ISFET is obvious relative to other ISFETs with sensing layers of different materials. 电浆辅助化学气象沈积的二氧化矽材料会导致严重的水合作用,因此以此材料当作感测层的离子感测电晶体相对于其他材料的离子感测电晶体而言,会产生明显的闸极电压飘移现象。
- Maximum peak Reverse recovery Current 最大峰值反向恢复电流
- zero gate voltage source current 零栅电压源电流
- Maximum peak reverse current full cycle 最大反向峰值电流
- Zero Gate Voltage Drain Cut-off Current 零栅压漏电流
- instantaneous forawar gate voltage 瞬时正向门电压