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- By means of this property,the connect lines,P type semiconductor or N type semiconductor,P N junction,and 2D and 3D integrated circuit connection can be made. 利用这个特性,可制作导电图样,制作连线,制作P型半导体材料和N型半导体材料,制作P-N结,制作二维和三维集成电路互连结。
- p type semiconductor p型半导体,p 型半导体
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- Elements are manufactured of green silicon carbide that is classed as an excess electron type semiconductor. 这种硅碳棒由一种新型的碳化硅制成，被归类为超级半导体。
- An ion injection mask layer is formed that exposes a device isolation region on a low concentration first conductive type semiconductor substrate. 离子注入掩模层被形成，其暴露低浓度的第一传导类型半导体基片上的装置隔离区。
- A flip chip type semiconductor device is provided with a semiconductor chip with a plurality of pad electrodes on one surface. 一种芯片倒装型半导体器件，其配备的半导体芯片的表面上有多个焊盘电极。
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature. Dietl等人的理论计算预测，p型掺杂(Zn,Mn)O可能具有室温铁磁性。
- Charge Coupled Devices(CCD) is the new type semiconductor integrated photoelectric device developed at the beginning of the seventies of the 20th century. It was put forward at the first of 1970 by W. 电荷耦合器件CCD(Charge Coupled Devices)是20世纪70年代初发展起来的新型半导体集成光电器件;它是美国贝尔电话实验室的W.
- P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
- But there are many basic problems waiting for investigating,for example, high qulity bulk ZnO crystals growth、stable p type doping realiztion、good schottky contact making,etc. 然而现在生长大块的ZnO体单晶，制得高质量的ZnO薄膜，实现稳定可靠的P型掺杂，做出重复性好热稳定性好的金属ZnO肖特基接触欧姆接触的技术成为亟待解决的问题。
- Bulk type semiconductor strain gauge 体型半导体应变计
- Diffused type semiconductor strain gauge 扩散型半导体应变计
- Takes Japanese MITSUBISHI FX series and OMRON C series P type PLC as examples, simply analyzes the status of three PLC parts which related with outside circuit, the design of hardware circuit is given. 以日本三菱FX系列、欧姆龙C系列P型PLC为例 ,简要分析PLC与外部电路有联系的三部分情况 ,提出此方面的硬件电路设计
- In this controller the immnity control is composed of a P type immunity feedback controller, a control increment module and an intelligent controller for regulating immunity feedback rule. 其中 ,免疫控制器包括一个P型免疫反馈控制器、一个控制增量模块和一个用于调节免疫反馈规律的智能调节器。
- p-n type semiconductor composite photocatalysts p-n复合半导体光催化剂
- alloy type semiconductor detector 合金型半导体探测器
- Accordingly,the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms:the drift-diffusion,pure drift and thermionic emission currents,have been analyzed theoretically. 并以此为依据,从理论上分别分析和比较了多子漂移扩散、纯漂移和热电子发射电流机制所起的作用。
- The invention relates to an encapsulating method for metal flat plate type semiconductor, which is mainly used for four-face footless flat patch-typed encapsulating of semiconductors. 本发明涉及一种金属平板式半导体封装方法，主要用于半导体的四面无脚扁平贴片式封装。
- p type channel MOS intergrated circuit p沟MOS集成电路
