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- Application of Elbow Type Metal Oxide Arrester to Composite Transformers 肘型金属氧化物避雷器在组合式变压器中的使用
- Both transistors are not of the n. p. n type. 两个晶体管不都是n.;p
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- VMOS? Vertical Metal Oxide Semiconductor? 垂直金属氧化物半导体?
- A new series of combined metal oxide have been synthesized.Gas solid catalytic N ethylation reaction of m toluidine with ethanol under atmosphere was investigated. 合成了复合金属氧化物催化剂,进行了以乙醇和间甲苯胺为原料,常压固定床反应工艺研究。
- Development trend of metal oxide nanomaterials is reviewed lastly. 最后对金属氧化物纳米材料研究的发展方向提出了展望。
- Type metal The alloy for cast type, comprising lead, tin and antimony. 活字金属铸造活字的合金,由铅,锡和锑组成。
- Type metal: The alloy for cast type, comprising lead, tin and antimony. 活字金属:铸造活字的合金，由铅，锡和锑组成。
- Process of making lustre glaze by metal oxide as colouring agent was narrated. 叙述了以金属氧化物为着色剂的虹彩釉的制作过程。
- Metal oxide varistor(MOV) is commonly used in the over-voltage protection. 氧化锌电阻片(MOV)常用于过电压保护,其小电流特性决定了它的工频稳定性。
- And draws a conclusion that doped N type monocrystal silicon is quite fit for micro EDM, while a non doped one isn't by a lot of EDM experiments. 对未掺杂单晶硅和掺杂N型硅进行了电火花加工工艺试验,得出了掺杂N型硅有很好的微细电火花加工性能的结论。
- Conclusion Abnormal changes of apo(s) i n type 2 dia betes mellitus may be a cause of type 2 diabetes associated with HTG and CHD. 结论载脂蛋白异常是2型糖尿病患者的代谢紊乱特征，同时可能是2型糖尿病发生脂代谢紊乱和冠心病的重要原因。
- Physics of Transition metal Oxides. 过渡金属氧化物物理学。
- Metal oxides from oil consumption damage catalysts. 金属氧化物破坏催化剂。
- A piece of type metal lower than the raised typeface, used for filling spaces and blank lines. 空铅，铅块比抬升的印刷平面要更低的金属条，用于填空格和空行
- The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper. 报道了n型GaAs上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的GaAsMES－FET的失效分析。
- A piece of type metal lower than the raised typeface,used for filling spaces and blank lines. 空铅，铅块比抬升的印刷平面要更低的金属条，用于填空格和空行
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究; 并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。
- Both doping and quantum dot sensitization extend the visible light absorption of the metal oxide materials. 掺杂和量子点敏化都增强了金属氧化物材料对可见光的吸收。
- P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
