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- multilayer InAs quantum dots 多层InAs量子点
- In addition, by utilizing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric (TE)-field-enhanced multicolor quantum dot infrared photodetector (QDIP) has been achieved. 另外，藉由在砷化铟量子点上盖上2奈米的铝砷化镓，已经完成一个增强横向电波的多波段量子点红外线侦测器。
- Study of Growth and Thermal Treatment in InAs Quantum Dots 砷化铟量子点之成长及热处理
- Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band 近红外波段InAs量子点结构与光学特性
- THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE InAs量子点在肖特基势垒二极管输运特性中的影响
- CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE 含InAs自组装量子点肖特基二极管的关联放电效应
- CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER 含多层InAs量子点的双肖特基势垒二极管输运特性研究
- Annealing Effects of Self-Assembled InAs Quantum Dots With Different Thick GaAs Cap Layers 不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响
- AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析
- Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors 内嵌自组装InAs量子点调制掺杂场效应管的光电特性
- InAs quantum dots InAs量子点
- Wang T H, Li H W, Zhou J M. Charging effect in InAs selfassembled quantum dots [ J] .Appl Phys Lett, 2001, 79(10): 1537. 王太宏;李宏伟;贾海强等.;纳米结构的制备及单电子器件研究[J]
- State-filling effects of exciton in quantum dot array are observed. 发现许多正负折射交替一维光子晶体新特性。
- The Study of a Single Quantum Dot Lasers in Microcavity[J]. 引用该论文 廖庆洪;刘正东;尤素萍;曹昌祺.
- Imagine a small latex bead filled with a combination of quantum dots. 试著想像有个小型的乳胶珠粒，里头携带了几种量子点。
- The latest progress of semiconductor quantum dot and quantum wirema. 综述了半导体量子点和量子线材料的最新发展动态及其制备技术。
- Stimulated Emission Behavior of Single Quantum Dot in Microcavity[J]. 引用该论文 廖庆洪;刘正东;尤素萍;曹昌祺.
- InAs self-assembled quantum dots 自组装InAs量子点
- To this thin film, they chemically linked quantum dots made of cadmium selenide for sensitization. 他们把硒化镉制成的量子点用化学方式连接在了这种薄膜上,用于敏化。
