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- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存储单元阵列包括多个存储单元，每一存储单元具有控制栅和浮动栅。
- memory cell array 存储单元阵列
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- The CAM includes a CAM cell array, a priority encoder, and a shift register unit. 该CAM包含CAM存储单元阵列、优先编码器、以及移位寄存器单元。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. 用于存储单元的一个阵列的各列的选择电路，用来保持该存储单元的读出或写入数据。
- The priority encoder tests the CAM cell array to determine if the CAM cell array has errors by comparing search data with data stored in the CAM cell array. 优先编码器通过比较搜索数据与存储在CAM存储单元阵列中的数据来测试CAM存储单元阵列、以确定CAM存储单元阵列是否有错误。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- The control technology of maximum power point tracking(MPPT)is the maximum output power of photovoltaic cell array under given conditions of a certain environment temperature and sunshine intensity in the photovoltaic system domain. 最大功率点跟踪(MPPT)控制技术是光伏系统领域中在一定环境温度以及日照强度情况下太阳能电池阵列能够输出的最大功率。
- The majority of photovoltaic water pumping systems produced in the factories are worldwide equipped with constant voltage tracker (CVT)instead of maximal power point tracker (MPPT)for tracking the maximal power output of solar cell array. 光伏阵列的最大功率点跟踪器可使光伏水泵系统获得实时的最大功率输出。 出于方便及降低系统造价，世界上大多数国家的光伏水泵系统产品迄今仍采用恒定电压跟踪器（CVT），以代替真正的最大功率点跟踪器（MPPT）。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Unused memory cells following the BELL&RET command are considered free. 在电铃&浸水使柔软指令之后的不用记忆单元是考虑过的免费。
- Flip-flops are a key componemt and memory cells of sequential logic circuit. 触发器是构成时序逻辑电路的存储单元和核心部件。
