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- IBM’s MRAM will use magnetic tunnel junctions, an application of spintronics in which electrons are allowed to “tunnel” between two ferromagnetic layers based on their spin. IBM的MRAM利用了磁隧道结，它应用了旋转电子学，其中电子被允许“隧道”穿过两层基于旋转的铁磁层。
- Magnetic tunnel junctions form the basis of the MRAM chips mentioned earlier.Each junction can store one bit of data in the orientation of its unpinned ferromagnetic layer. 磁穿隧接面即是MRAM晶片的基本单元，每一接面之非固定磁化层可储存一位元资料。
- double barrier magnetic tunnel junctions 双势垒磁性隧道结
- Electron holography investigation on the barrier structures of Co based magnetic tunnel junctions Co基磁性隧道结势垒结构的电子全息研究
- Thermal stability of magnetic tunnel junctions investigated by x-ray photoelectron spectroscopy 磁性隧道结热稳定性的x射线光电子能谱研究
- First-principles theory of quantum well resonance in double barrier magnetic tunnel junctions 双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论
- Current-Driven Dependence of Junction Resistance-Area Product of Magnetic Tunnel Junction 磁性隧道结电阻与电流驱动相关性分析
- A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape 处理具有任意形状势垒的磁性隧道结中电子输运的一个简单方法
- magnetic tunnel junctions 磁隧道结
- Magnetic tunnel junction 磁性隧道结
- Keywords La_（0.7）Sr_（0.3）MnO_3 films;magnetron sputtering;magnetic tunneling junctions;tunnel magnetoresistance;interface; 3薄膜;磁控溅射;磁性隧道结;隧穿磁电阻;界面;
- Passengers for Hereford change at Severn Tunnel junction. 前往Hereford的旅客请在Severn隧道会合处换车。
- Fig. 3 I2V curves for different tunnel junction width Z. 图3设置不同隧道结宽度Z时的I2V曲线。
- Electron holography investigation of the barrier of magnetic tunnelling junctions 电子全息对磁隧道结势垒层的研究
- Phase shift of the barriers of the double magnetic tunnelling junctions in electron holograms 磁性隧道结的双势垒层的全息相位图
- Study on Tunneling Characters of Magnetic Tunneling Junctions in Magnetic and Nonmagnetic Inserted 含磁性非磁性金属插入层磁隧道结的隧穿特性研究
- Keywords magnetic tunnel junction;tunneling magnetoresistance;contact-shadow-mask method;optical lithography methods; 磁性隧道结;隧穿磁电阻;金属掩模法;光刻法;
- The Tunneling Conductance and Tunneling Magnetic Resistance in the Double Magnetic Tunneling Junctions with Ferromagnetic Layers of Finite Thickness 具有有限铁磁层厚度的磁性双隧道结中的隧穿电导和磁电阻
- A New Method and Device of Mask Alignment for Preparation Magnetic Tunneling Junction 用于制备磁隧道结的模板套准新方法及装置
- Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors 双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用
