您要查找的是不是：
- Study on Effects of Alkalis on Electrical and Technological Properties of Low Dielectric Loss Glasses 碱金属氧化物对低损耗玻璃工艺性能及电学性能的影响
- Thus, high-permittivity, low dielectric loss, and high stability have been successfully achieved in such novel percolative composites, which was also explained by the theoretical simulations. 从而成功地实现了渗流型复合材料的高介电、低损耗、高稳定性，并提出了相应的理论模拟解释。
- Solderabity, lower dielectric loss in high frenquency (resistance to high frequency) and colorable.UL recognized. 该产品具有直焊性，且有高频介质损耗抵（耐高频）和可着色等待性。通过UL认证。
- This paper describes the technology and properties of a large radom loaded on truck.A material system with low dielectrical loss and cured at normal atmospheric temperature is selected. 本文介绍了一种大型车载雷达罩的制造工艺和性能，选择了一种低介电损耗，并适于常温固化的材料体系。
- low dielectric loss 低损耗
- Keywords redom comb sandwich structure low dielectrical loss; 雷达罩;蜂窝夹层结构;低介质损耗;
- Low dielectric constant and loss crosslinked PS was synthesized via bulk polymerization,with styrene and divinylbenzene(DVB) as monomers,AIBN as initiator. 以苯乙烯和二乙烯基苯(DVB)为单体,AIBN为引发剂,采用本体聚合的方法,得到在高频下具有低介电常数和低介电损耗的交联聚苯乙烯(PS),对交联PS进行了性能测试和表征。
- PbO deficiency only affected dielectric loss very weakly. 而铅欠缺对介电损耗影响很小。
- Quartz fibre strengthen Bis maleimide BMI composite material have low to dielectric loss angle, able to bear high temperature, damp and hot, good mechanics performance. 摘要石英纤维增强双马来酰亚胺树脂复合材料具有低介电损耗、耐高温、耐湿热及良好的力学性能。
- Dielectric loss measuring is the normal test items in electric power system. 介质损耗测量是电力系统中的常规试验项目。
- The prepolymerization of bismaleimide can increase dielectric loss dissipation. 双马来酰亚胺预聚会增加固化物的介电损耗。
- Various CVD technologies for preparing low dielectric constantmaterials in ULSI circuits are summarized. 综述了制备ULSI低介电常数材料的各种CVD技术。
- Fluorin doped DLC films have low dielectric constant, and furthermore they are hydrophobe and anti-corrupttion. 掺氟DLC膜在憎水性、耐蚀性、热稳定性和降低介电常数等方面更为优异；
- Dual damascene technology of Cu / low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介绍了铜/低介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(DRAM)和逻辑电路器件中。
- In order to alleviate the problems, low dielectric constant (k) materials are used to replace the conventional intermetal dielectric (IMD), SiO2. 为了改善这些问题，使用低介电常数材料作为导线间的介电层为必要选择。
- Dual damascene technology of Cu/ low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介绍了铜/介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(RAM)逻辑电路器件中。
- The product is characteristic of low dielectric Largent at high frequency and is self fluxing It's suitable to be used as elements and coils of high frequency equipment. 该产品具有在高频下漆膜的介质损耗角正切小的特性,并且有直焊性,适应高频电器仪表绕圈和元件。
- Based on the properties of BARC and low dielectric constant, the process reliability of these materials can be ensured and the process competence can be promoted. 由于此抗反射材料本身是由低介电常数材料所构成，因此在微影制程中可省去再外加抗反层的步骤，并增加制程的可靠度及竞争性。
- The effect of different impurities and dopants on the dielectric loss of alumina ceramics are reviewed. 综述了不同杂质及掺杂对氧化铝陶瓷介电损耗影响的研究进展。
- In this system good regioselectivity can be achieved mainly because of the existence of a porous support and the low dielectric constant of the reaction media. 一定条件下该硝化剂具有较好的反应位置选择性，这一是由于反应介质低的介电常数，二是多孔载体也具有明显的作用。
