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- However, the effect of low energy ion implantation on the length of bough, the side-bough, the divarication and the size of peanut were very weak. 而花生主枝长,侧枝长,分枝数和荚果大小等性状除个别剂量外影响较小,变化规律性较弱。
- Application of low energy ion implantation in breeding of high yield CGTase strains 低能离子注入在CGTase高产菌株选育中的应用
- low - energy ion implantation 低能离子注入
- low energy ion implantation 低能离子注入
- Therefore, it is thought that low energy N(superscript +) ion implantation can improve the budding and survival rate of Portulaca oleracea L. 由此可见，一定剂量范围内的低能N(上标+)注入会提高马齿苋种子的发芽率和成活率。
- Study on Damage of Molecular Structure for Solid Uracil Induced by Low Energy Ions Implantation 低能离子注入对固态尿嘧啶损伤的初步研究
- Screening of L-lactic Acid Producing Bacteria by Low Energy Ions Implantation and Preliminary Research of Fermentation Conditions 低能离子注入L-乳酸生产菌种选育与发酵条件初步优化
- energy ion implantation 离子注入技术
- high energy ion implantation 高能离子注入
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- Thc mutagenic effects of Vc strains by low encrgy ion implantation have been studied. 对低能离子注入Vc生产菌的诱变效应进行研究。
- Low energy ion beam implantation 离子柬注入
- Diamond like carbon (DLC) films on single crystal silicon and other substrats were produced by low energy ion beam deposition. 研究了利用低能离子束技术，在单晶硅片等多种基体表面形成类金刚石薄膜（DLC膜）。
- Development trend of Si varactor is summarized:ion implantation,to match capacitance during testing,integration,low voltage,super-miniaturization,SMD and wide application. 总结了硅变容管的发展趋势，离子注入化、电容配对中测化、集成化、低压化、超小型化、片状化和应用广泛化。
- To compare with other kinds of fabrication technology, like ion implantation and solid-state epitaxy, our of manufacturing technology is simple and low cost of. 与离子布值、固相磊晶和其他技术做比较，我们的制造技术简单且低成本。
- The incidention flux, the ion impact angle and the ion impact energy were calculated and synthesized to determine the ion implantation dose on the target surface. 重点研究了等离子体鞘层的时空演化规律，以及入射离子流密度、入射离子角度与能量的分布，由此得到了注入离子剂量在靶表面的分布。
- The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. 本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。
- Low energy ions were produced in gas arc discharge,and the ions were accelerated into tyrosine(Tyr) aqueous solution. 分别以注入机和气体常压弧光放电产生的低能离子作用于固态和溶液中的氨基酸， 研究了样品红外光谱的变化。
- The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target corner. 注入离子剂量在靶表面的分布不均匀，在边角附近出现峰值；
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
