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- The films of ZnS and MgF_2 at low substrate temperatures deposited by ICB become hard films. 基底不加温就可以得到ZnS、MgF_2的硬膜。
- Preparation and Characteristics of ITO Films Deposited on Polyester at Low Substrate Temperature 柔性衬底ITO导电膜的低温制备及特性研究
- low substrate temperature 低温
- The effect of substrate temperature on the accumulation of disorder is substantial. 衬底温度对于无序区积累的影响是很显著的。
- What were the engineering issues faced in developing the process (eg, low substrate aqueous solubility, low product aqueous solubility)? 在发展这个程序所需面对的工程问题是什么?(例如：低基质水溶性，低产物溶解度)?
- So to control the substrate temperature in an appropriate range is very important. 但是过高的基片温度对薄膜的结构和性能都不利，所以控制温度在一定的范围内非常重要。
- The filamentous mi-croorganisms usually grow up under low substrate concentration conditions, and under high onesthey will be replaced by floc -forming microorganisms. 丝状菌一般在基质浓度较低的条件下生长．基质浓度较高时菌胶团将要代替丝状菌。
- The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature. 实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。
- The effect of substrate temperature,argon pressure,and MF power on the electrical and optical properties of complanate ZAO films were investigated. 南开大学光电子薄膜器件与技术研究所天津市重点实验室;
- The simulation results show that such nonuniformity correction can work in uniform substrate temperature with fluctuant range of 4K. 仿真结果表明，该校正方法可以在变化范围约为4K的均匀衬底温度内达到良好校正效果。
- The influences of many factors on substrate temperature have been studied in detail during arc ion plating (AIP) in this paper. 采用该计算模型分析了基体材质、形状与电弧离子镀膜工艺参数改变时基体温度的变化,经实验验证,模型计算与实验数据基本吻合。
- Research is made on the effect of substrate temperature(?T??s)on defects of SiO?2/Si interface caused by vacuum ultraviolet (VUV)photochemical vapor deposition (CVD). 研究了VUV（真空紫外）光直接光CVD（化学汽相淀积）SiO2/Si界面微结构缺陷与衬底温度（Ts）的关系。
- The effects of different parameters which include the flow ratio of SiH4, the flow ratio of H2 and substrate temperature were investigated by means of RHEED, TEM and AFM. 利用反射高能电子衍射(RHEED)、透射电子显徽镜(TEM)和原子力显微镜(AFM)研究了 SiH4流量、H2流量和衬底温度等工艺参数的改变对薄膜晶化的影响。
- First , the deposited films were characterized as a function of argon-oxygen gas flow ratio, deposited time, substrate temperature, and annealing temperature. 我们首先设计不同的制程参数：控制氩气与氧气的比例、溅镀时间、改变基板温度及退火处理温度；
- Besides, by changing substrate as Ru or Pt/MgO, the RuO2 films will exhibit highly (200)-oriented films, no matter the O2 flow ratio, substrate temperature, and chemical bonding. 将基板种类由二氧化矽改成钌金属/二氧化矽基板及白金/氧化镁单晶基板，则二氧化钌薄膜呈现(200)优选指向，不受氧气流量比、基板温度及表面化学键结的影响。
- SEM micrographs revealed that the morphology of the film varied with the substrate temperature, the XRD analysis revealed that the ZnO films were wurtzite. 通过SEM观察，发现在不同衬底温度下，薄膜表面具有不同形貌特征。
- The food should be kept at low temperature. 这种食品应低温保存。
- We investigated the influence of substrate temperature on the molecule structure and surface morphology of the PTCDA by Raman and AFM, Moreover we consummated the growth mode of PTCDA on p-Si. 采用Raman光谱,AFM分别研究了衬底温度对于PTCDA分子结构和表面形貌的影响,进而完善了p-Si基PTCDA薄膜的生长机制。
- Lead will fuse at quite a low temperature. 铅会在相当低的温度下熔化。
- This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power,V(O2)/V(Ar) ratio and substrate temperature. 研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。
