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- low dielectric constant films 低介电常数介质薄膜
- Fluorin doped DLC films have low dielectric constant, and furthermore they are hydrophobe and anti-corrupttion. 掺氟DLC膜在憎水性、耐蚀性、热稳定性和降低介电常数等方面更为优异；
- In order to alleviate the problems, low dielectric constant (k) materials are used to replace the conventional intermetal dielectric (IMD), SiO2. 为了改善这些问题，使用低介电常数材料作为导线间的介电层为必要选择。
- Based on the properties of BARC and low dielectric constant, the process reliability of these materials can be ensured and the process competence can be promoted. 由于此抗反射材料本身是由低介电常数材料所构成，因此在微影制程中可省去再外加抗反层的步骤，并增加制程的可靠度及竞争性。
- In this system good regioselectivity can be achieved mainly because of the existence of a porous support and the low dielectric constant of the reaction media. 一定条件下该硝化剂具有较好的反应位置选择性，这一是由于反应介质低的介电常数，二是多孔载体也具有明显的作用。
- The results exhibit that the new Low-k material, appears to be a promising low dielectric constant material for IMD application beyond the 65 nm technological node. 经由上述的实验结果，显示本研究中的薄膜能真正应用于下一世代的积体电路后段制程里。
- Low dielectric constant and loss crosslinked PS was synthesized via bulk polymerization,with styrene and divinylbenzene(DVB) as monomers,AIBN as initiator. 以苯乙烯和二乙烯基苯(DVB)为单体,AIBN为引发剂,采用本体聚合的方法,得到在高频下具有低介电常数和低介电损耗的交联聚苯乙烯(PS),对交联PS进行了性能测试和表征。
- Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- H. Treichel, G. Ruhl, P. Ansmann, R. Wurl, Ch. Muller, and M. Dietlmeier, “Low Dielectric Constant Materials for Interlayer Dielectric,” Microelect. Eng., Vol. 40, 1998, pp. 1-19. 杨正杰，张逸凤，张鼎张，郑晃忠，“低介电常数材料与制程”，电子月刊，十月号，2000年。
- PMP has low moisture absorption and excellent chemical resistance.TPX is also used for electrical insulating applications requiring high dielectric strength and low dielectric constant. PMP有低吸水率和优秀的化学抵抗性能，它经常被应用在电子绝缘并且高介电强度和低介电常数环境中。
- Research on low dielectric constant SiOF films for ULSI 超大规模集成电路中低介电常数SiOF薄膜研究
- Compared to inorganic materials, polymeric materials have larger electro-optical response, lower dielectric constant, and higher damage threshold, and are easier to be processed. 与无机材料相比，聚合物材料具有较大的电光响应、高的破坏阈值和低的介电常数，并且容易加工成形。
- FTIR Analyses of SiOF Thin Film with Low Dielectric Constant 低介电常数含氟氧化硅薄膜的红外光谱分析
- Keywords POSS;Porous film;Low dielectric constant;Rotary coating; 多孔薄膜;低介电常数;旋转涂布;
- low dielectric constant material 低介电常数介质
- low dielectric constant(low-k) material 低介电常数材料
