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- The review ofour work includes: ion implanted contact, ion beam sputtering diposition hardfilm on beryllium and lubricate film on steel and so on. 即离子注入、子束混合、种离子束淀积等技术的研究和应用。
- In this paper,the volume expansion in B ion implanted Ib type diamond has been studied and the origin has been analyzed. 本文对B离子注入合成Ib型金刚石薄膜后体积膨胀现象进行了研究,分析了引起体积膨胀的可能因素及原因。
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- This paper introduces the applied investigation of tribology capability of recoil and mixing ion implanted tin-bronze moving part of oil allocating pair of hydraulic pumb. 论述了对液压泵配流副中施行离子反冲注入混合处理的锡青铜动件的摩擦学性能的实验研究。
- After the quarantine, all the accessories including the filter, tank, bubble device, and thermometer should be cleaned up thoroughly. Recommended to sterilize all accessories, then cleaning with water. 隔离检疫缸及周边器材（打气帮浦、过滤器、温度计）使用过后，应用消毒水彻底消毒，并用清水冲洗乾净。
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- A comprehensive study has been performed on the phase compositions, element distributions and binding states of the N + B ion implanted layer by means of X- ray diffraction(XRD), Auger electron spectroscopy(AES) and X- ray photoelectron spectroscopy(XPS). 用X-射线衍射(XRD)、俄歇电子能谱(AES)和X-光电子能谱(XPS)的方法对N+B离子注入层的相组成、元素的分布和元素的结合状态进行了综合考察。
- Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment. 传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
- With Si ion implantation, the implanted layer is microcrystal.With Ti ion implantation, the implanted layer is amorphous. 英文摘要： The microstructure of implanted layer of H13 steel after Si and Ti ion implantation was studied.
- A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅栅结构的自对准离子注入工艺，研制成功了源漏击穿电压BVDS为120V、输出功率5.;1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。
- Test 1, 60s under 16pa static water pressure, with the vavle off and bubbling device on, result is no leaking. 测试1;在静态水压16帕;阀心关闭和气泡器打开状态维持60秒;该测试结果是没有泄漏.
- A fully ion implanted germanium phototransistor 全离子注入锗光电晶体管的研制
- The usual tactic is to fire arsenic or boron ions into the surface of the silicon using a device called an ion implanter. 常见的做法是使用名为离子布植机的装置，将砷或硼射入矽的表面。
- CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON 离子注入硅Nd-YAG连续激光退火
- ION IMPLANTED BIPOLAR ECL SILICON IC 离子注入双极硅ECL集成电路
- A bubble will burst at the slightest touch. 气泡稍微一碰就破。
- We have studied the influence of different annealing conditions on refractive index profiles of He and H ions implanted lithium niobate planar waveguides. 研究了不同退火条件对氢离子和氦离子注入铌酸锂平面波导中折射率分布的影响。
- ion implanted integrated circuit 离子注入集成电路
- A display device that uses a cathode ray tube. 一种使用阴极射线管的显示装置。
