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- ion implantation MOS integrated circuit 离子注入MOS集成电路
- ion implanted mos 离子注入金属氧化物半导体
- ion implanted mos device 离子注入金属氧化物半导体掐
- Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment. 传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
- The review ofour work includes: ion implanted contact, ion beam sputtering diposition hardfilm on beryllium and lubricate film on steel and so on. 即离子注入、子束混合、种离子束淀积等技术的研究和应用。
- In this paper,the volume expansion in B ion implanted Ib type diamond has been studied and the origin has been analyzed. 本文对B离子注入合成Ib型金刚石薄膜后体积膨胀现象进行了研究,分析了引起体积膨胀的可能因素及原因。
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- This paper introduces the applied investigation of tribology capability of recoil and mixing ion implanted tin-bronze moving part of oil allocating pair of hydraulic pumb. 论述了对液压泵配流副中施行离子反冲注入混合处理的锡青铜动件的摩擦学性能的实验研究。
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- A comprehensive study has been performed on the phase compositions, element distributions and binding states of the N + B ion implanted layer by means of X- ray diffraction(XRD), Auger electron spectroscopy(AES) and X- ray photoelectron spectroscopy(XPS). 用X-射线衍射(XRD)、俄歇电子能谱(AES)和X-光电子能谱(XPS)的方法对N+B离子注入层的相组成、元素的分布和元素的结合状态进行了综合考察。
- ion implantation gate MOS integrated circuit 离子注入MOS 集成电路
- With Si ion implantation, the implanted layer is microcrystal.With Ti ion implantation, the implanted layer is amorphous. 英文摘要： The microstructure of implanted layer of H13 steel after Si and Ti ion implantation was studied.
- ion implantation gate MOS intergrated circuit 离子注入MOS集成电路
- A fully ion implanted germanium phototransistor 全离子注入锗光电晶体管的研制
- We have studied the influence of different annealing conditions on refractive index profiles of He and H ions implanted lithium niobate planar waveguides. 研究了不同退火条件对氢离子和氦离子注入铌酸锂平面波导中折射率分布的影响。
- CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON 离子注入硅Nd-YAG连续激光退火
- ION IMPLANTED BIPOLAR ECL SILICON IC 离子注入双极硅ECL集成电路
- The application of Freeman ion source linked to LC-2A ion implanter is described in the paper. 本文叙述了弗里曼(Freeman)离子源体联接在LC-2A型中能离子注入机上的应用;
- The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. 本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。
