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- ion implantation device 离子注入设备
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅栅结构的自对准离子注入工艺，研制成功了源漏击穿电压BVDS为120V、输出功率5.;1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。
- This master thesis deals with the study of ultra low power Low Noise Amplifier (LNA) for use inmedical implant device. 在本篇论文中，我们提出一个低功率数位讯号处理器的实作经验。
- The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. 本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。
- Thc mutagenic effects of Vc strains by low encrgy ion implantation have been studied. 对低能离子注入Vc生产菌的诱变效应进行研究。
- The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target corner. 注入离子剂量在靶表面的分布不均匀，在边角附近出现峰值；
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- M.Farley, B.Simonton, in “Ion Implantation Science and Technology”, Ion Implantation Technology Co.Yorktown 1996. 宋慧娟等编著，人类与自然科学，五南图书出版公司印行，2003/09。
- First, high-current metal ion implantation with the development of a synthesis of metal silicide of new technologies. 首先用强流金属离子注入发展出合成金属硅化物的新技术。
- The codeposition of Mo-Ni by electroplating and ion implantation were used to add molybdenum into coatings. 又采用钼-镍合金电镀和离子注入钼+铬硅共渗的方法， 得到了含钼的铬硅渗层。
- Methods Our protocol for intraoperative testing of the implant device includes device electrode impedance test and neural response telemetry (NRT), which measures the electrically evoked auditory nerve compound action potentials (ECAP). 方法 在 40例患儿人工耳蜗植入术中先测定电极阻抗 ,然后使用神经反应遥测技术 (neuralresponsetelemetry,NRT)监测 6个电极的电诱发听神经复合动作电位 (electricallyevokedauditorynervecompoundactionpotentials,ECAP)。
- Abstract: This paper introduces the application and development of ion plating, ionodialysis, ion implantation and the compound technology. 文摘:介绍了离子镀、离子渗、离子注入及其复合工艺的应用与发展。
- From the perpendicular FMR spectra measured, the variation of the magnetic anisotropy with ion implantation dose is determined. 根据实验测得的垂直FMR谱,确定了氮离子注入层的磁各向异性随注入剂量而变的关系。
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- The variation of the dangling bonds with annealing temperature in a-Si: F produced by ion implantation is measured by EPR. 本文用电子顺磁共振(EPR)测量了离子注入a-Si:F中悬键密度随退火温度变化的关系。
- Therefore, it is thought that low energy N(superscript +) ion implantation can improve the budding and survival rate of Portulaca oleracea L. 由此可见，一定剂量范围内的低能N(上标+)注入会提高马齿苋种子的发芽率和成活率。
- CLOT NOT: Blood clots can form at any surgical site or around any implanted device. 血块不要来：在任何手术部位或是植入的装置周围都会形成血块。
- This implantable device includes internal RF front-end circuit, control circuit, stimulator, and on-chip transmitter. 整个植入式系统包含内部射频前端电路、控制电路、刺激器以及资料传送电路。
- The field emission and photoluminescence properties of ZnO nananeedles prepared at various ion implantation conditions were compared. 改变不同离子布植以及布植时间的不同，探讨其表面结构、场发射以及发光行为。
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